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科研机构
北京大学 [17]
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期刊论文 [17]
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2017 [1]
2015 [4]
2014 [6]
2013 [1]
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内容类型:期刊论文
专题:北京大学
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Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit
期刊论文
SOLID-STATE ELECTRONICS, 2017
Al-Ameri, Talib
;
Georgiev, Vihar P.
;
Sadi, Toufik
;
Wang, Yijiao
;
Adamu-Lema, Fikru
;
Wang, Xingsheng
;
Amoroso, Salvatore M.
;
Towie, Ewan
;
Brown, Andrew
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
Electrostatics
Nanowire transistors
Performance
Quantum effects
TCAD
GATE
SIMULATION
INVERSION
MULTIGATE
MOSFETS
NM
Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling
期刊论文
science china information sciences, 2015
Wang Chao
;
Wu ChunLei
;
Wang JiaXin
;
Huang QianQian
;
Huang Ru
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
tunneling field-effect transistor
current model
surface potential
drain voltage
tunneling width
Line-edge roughness induced single event transient variation in SOI FinFETs
期刊论文
半导体学报(英文版), 2015
Wu Weikang
;
An Xia
;
Jiang Xiaobo
;
Chen Yehua
;
Liu Jingjing
;
Zhang Xing
;
Huang Ru
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/12/03
heavy ion irradiation single event transient variation line-edge roughness SOI FinFET
heavy ion irradiation
single event transient
variation
line-edge roughness
SOI
FinFET
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Wang, Yijiao
;
Al-Ameri, Talib
;
Wang, Xingsheng
;
Georgiev, Vihar P.
;
Towie, Ewan
;
Amoroso, Salvatore Maria
;
Brown, Andrew R.
;
Cheng, Binjie
;
Reid, David
;
Riddet, Craig
;
Shifren, Lucian
;
Sinha, Saurabh
;
Yeric, Greg
;
Aitken, Robert
;
Liu, Xiaoyan
;
Kang, Jinfeng
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
electrostatics
nanowire transistors (NWs)
performance
quantum effects
TCAD
STATISTICAL VARIABILITY
INVERSION-LAYERS
GATE
CMOS
GENERATION
ELECTRON
DENSITY
FINFETS
DEVICES
MOSFETS
Comparative study of silicon nanowire transistors with triangular-shaped cross sections
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Zhang, Yi-Bo
;
Sun, Lei
;
Xu, Hao
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
SCHOTTKY-BARRIER SOURCE/DRAIN
MOSFET
PERFORMANCE
SIMULATION
FINFETS
LEAKAGE
A closed-form capacitance model for tunnel FETs with explicit surface potential solutions
期刊论文
应用物理杂志, 2014
Wang, Jiaxin
;
Wu, Chunlei
;
Huang, Qianqian
;
Wang, Chao
;
Huang, Ru
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
FIELD-EFFECT TRANSISTORS
PARASITIC CAPACITANCES
FRINGE CAPACITANCE
GATE DIELECTRICS
MOS-TRANSISTOR
CMOS DEVICE
MOSFETS
SOI
PERFORMANCE
IMPACT
An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs
期刊论文
ieee电子器件汇刊, 2014
Wu, Chunlei
;
Huang, Ru
;
Huang, Qianqian
;
Wang, Chao
;
Wang, Jiaxin
;
Wang, Yangyuan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Analytical model
dual-modulation effects
surface potential
tunnel field-effect transistor
FIELD-EFFECT TRANSISTORS
SOI
Impact of Random Interface Traps and Random Dopants in High-k/Metal Gate Junctionless FETs
期刊论文
ieee 纳米技术汇刊, 2014
Wang, Yijiao
;
Huang, Peng
;
Wei, Kangliang
;
Zeng, Lang
;
Liu, Xiaoyan
;
Du, Gang
;
Zhang, Xing
;
Kang, Jinfeng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
High-k/metal gate (HKMG)
junctionless FET (JL-FET)
random dopant fluctuation (RDF)
random interface traps (RITs)
TCAD simulation
MOSFETS
FLUCTUATIONS
VARIABILITY
SIMULATION
An analytic model for gate-all-around silicon nanowire tunneling field effect transistors
期刊论文
chinese physics b, 2014
Liu Ying
;
He Jin
;
Chan Mansun
;
Du Cai-Xia
;
Ye Yun
;
Zhao Wei
;
Wu Wen
;
Deng Wan-Ling
;
Wang Wen-Ping
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/11
gate-all-round nanowire tunneling field effect transistor
band to band tunneling
analytic model
THRESHOLD VOLTAGE
MOSFET
FETS
Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer
期刊论文
journal of computational and theoretical nanoscience, 2014
Zhu, Haifeng
;
Huang, Shuai
;
Shi, Min
;
Zhang, Wei
;
Sun, Ling
;
He, Lin
;
Zhu, Xiaoan
;
Wang, Cheng
;
He, Xiaomeng
;
Liang, Hailang
;
He, Qingxing
;
Du, Caixia
;
He, Jin
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/16
Double-Gate (DG) MOSFET
Linearity
IIP3
Device Simulation
Intermodulation Distortion
Mixer
DG-MOSFETS
LINEARITY
INVERSION
PERFORMANCE
DEVICES
MODEL
CMOS
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