An Analytical Surface Potential Model Accounting for the Dual-Modulation   Effects in Tunnel FETs

doi:10.1109/TED.2014.2329372

CORC > 北京大学 > 信息科学技术学院

	An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs
	Wu, Chunlei ; Huang, Ru ; Huang, Qianqian ; Wang, Chao ; Wang, Jiaxin ; Wang, Yangyuan
刊名	ieee电子器件汇刊
	2014
关键词	Analytical model dual-modulation effects surface potential tunnel field-effect transistor FIELD-EFFECT TRANSISTORS SOI
DOI	10.1109/TED.2014.2329372
英文摘要	In this paper, an analytical model of the channel surface potential in the tunnel field effect transistors (TFETs) is established and verified. The dual-modulation effects in TFETs that the surface potential of the channel is alternatively controlled by the gate bias and drain bias in different operating regimes are emphasized and studied. The transition point corresponding to the switching between the two operating regimes is also analyzed quantitatively. For the first time, a closed-form analytical model of the surface potential in TFETs, including the impacts of both the gate voltage and drain voltage is proposed. Furthermore, a compact current model of the TFET-based on the derived surface potential expression is given. The model predicted tunneling current agree well with the TCAD simulation results in all operating regions of TFETs, which will be helpful for the circuit properties simulation of the TFET.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000342906200012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 4; ARTICLE; wuchunlei1989@pku.edu.cn; ruhuang@pku.edu.cn; hqq@pku.edu.cn; wangchaopkueecs@gmail.com; wjxin1989@126.com; yyw@ime.pku.edu.cn; 8; 2690-2696; 61
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152029]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Chunlei,Huang, Ru,Huang, Qianqian,et al. An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs[J]. ieee电子器件汇刊,2014.
APA	Wu, Chunlei,Huang, Ru,Huang, Qianqian,Wang, Chao,Wang, Jiaxin,&Wang, Yangyuan.(2014).An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs.ieee电子器件汇刊.
MLA	Wu, Chunlei,et al."An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs".ieee电子器件汇刊 (2014).