Comparative study of silicon nanowire transistors with triangular-shaped   cross sections

doi:10.7567/JJAP.54.04DN01

CORC > 北京大学 > 信息科学技术学院

	Comparative study of silicon nanowire transistors with triangular-shaped cross sections
	Zhang, Yi-Bo ; Sun, Lei ; Xu, Hao ; Han, Jing-Wen ; Wang, Yi ; Zhang, Sheng-Dong
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2015
关键词	SCHOTTKY-BARRIER SOURCE/DRAIN MOSFET PERFORMANCE SIMULATION FINFETS LEAKAGE
DOI	10.7567/JJAP.54.04DN01
英文摘要	Nanowire transistors with triangular cross sections (TNWTs) are proposed and studied. Working mechanisms of TNWTs and impacts of physical parameters are investigated with technology computer aided design (TCAD) tools. It is found that TNWT's current mostly concentrates in channel center, and expands to corners of the triangle at a higher gate voltage. TNWTs with a longer channel length show better subthreshold slope and lower drain-induced barrier lowering (DIBL), which allows low gate work function to be maintained. Moreover, we have also investigated the influence of the base corner angle on device's performance. We find that TNWTs with a large angle provide better tolerance of short channel effects, and TNWTs with a moderate angle can lead to higher drive current. (C) 2015 The Japan Society of Applied Physics; National Natural Science Foundation of China; SCI(E); EI; ARTICLE; sunl@pku.edu.cn; 4,SI; 54
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/420562]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Yi-Bo,Sun, Lei,Xu, Hao,et al. Comparative study of silicon nanowire transistors with triangular-shaped cross sections[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2015.
APA	Zhang, Yi-Bo,Sun, Lei,Xu, Hao,Han, Jing-Wen,Wang, Yi,&Zhang, Sheng-Dong.(2015).Comparative study of silicon nanowire transistors with triangular-shaped cross sections.JAPANESE JOURNAL OF APPLIED PHYSICS.
MLA	Zhang, Yi-Bo,et al."Comparative study of silicon nanowire transistors with triangular-shaped cross sections".JAPANESE JOURNAL OF APPLIED PHYSICS (2015).