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长春光学精密机械与... [30]

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限定条件	内容类型：会议论文专题：长春光学精密机械与物理研究所第一署名单位第一作者单位通讯作者单位

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	Power scaling and beam divergence compression of bottom-emitting vertical-cavity surface-emitting lasers 会议论文 5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013, Beijing, China 作者: Zhang X.; Qin L. 收藏 \| 浏览/下载：22/0 \| 提交时间：2014/05/15
	Influence of high temperature annealing in nitrogen on upconversion luminescence of -NaYF4: Yb3+, Er3+ hexagonal sub-microplates (EI CONFERENCE) 会议论文 2012 International conference on Function Materials and Nanotechnology, FMN 2012, May 19, 2012 - May 20, 2012, Zhengzhou, China Zhao J.; Jia T.; Kong X. 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/25 The pure -NaYF4: Yb3+ Er3+ hexagonal sub-microplates were successfully prepared by the combination of coprecipitation and hydrothermal methods using sodium citrate as chelator. The size of them is about 600 nm 400 nm (side length thickness). The obtained sample was divided into two parts and one of them was annealed in nitrogen at 300 C for 2 hours. The crystal structure of the -NaYF4: Yb3+ Er3+ hexagonal sub-microplates before and after annealing treatment is hexagonal phase. Under the excitation of 980 nm diode laser the upconversion luminescence intensity the sample after annealing is much stronger than that of the sample without annealing treatment. High temperature annealing process improved the crystallization of the sample resulting in the decrease of the nonradiative relaxation and the enhancement of the upconversion luminescence. (2012) Trans Tech Publications Switzerland.
	Optimization of 980nm high-power vertical-cavity surface-emitting laser array 会议论文作者: Zhang X(张星) 收藏 \| 浏览/下载：13/0 \| 提交时间：2012/05/12
	980nm垂直腔底发射激光器注入电流输运分布计算和调控会议论文中国北京崔怀洋; 吴坚; 黄梦; 宁永强; 钱建强收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/19 VCSEL 注入电流分布注入电流效率.
	Energy transition between Yb3+-Tm3+-Gd3+ in Gd3+, Yb3+ and Tm3+ Co-doped fluoride nanocrystals (EI CONFERENCE) 会议论文 17th International Conference on Dynamical Processes in Excited States of Solids, DPC'10, June 20, 2010 - June 25, 2010, Argonne, IL, United states Zhang J.; Cao C.; Lu S.; Qin W.-P. 收藏 \| 浏览/下载：15/0 \| 提交时间：2013/03/25 YF3: 20%Gd3+ 20%Yb3+ 0.5%Tm3+ nanocrystal has been synthesized by a hydrothermal method. The upconversion (UC) emission and energy transfer progresses between Gd3+-Yb 3+-Tm3+ under a 980-nm continuous wave semiconductor laser diode excitation have been explored. The experimental results show that the violet and ultraviolet (UV) enhancement with Tm3+ upconversion emission occurs in the nanocrystal and in the same time the UC emissions of Gd3+ from 6D9/2 6IJ 6P5/2 and 6P7/2 states to the ground state 8S7/2 are obtained too. The dynamic analysis implies that under 980-nm excitation the nanocrystal dimension plays a key role in the efficient energy transfer processes between Gd3+-Yb 3+-Tm3tt based on the energy matching conditions. 2011 Published by Elsevier B.V.
	High power diode laser with beam coupling (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Gu Y.; Wang L.; Feng G.; Shan X.; Yin H.; Liu Y. 收藏 \| 浏览/下载：52/0 \| 提交时间：2013/03/25 As the increasing applications of the semiconductor lasers in the laser processing the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper it mainly introduces the beam shaping and the technology of spatial coupling polarization coupling and wavelength coupling. The coupling key elements are presented and indicated. Finally the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.
	Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China Yan C.; He C.; Lu G.; Qin L. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current efficiency emission wavelength and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results it is shown that the device can still operate at high temperature condition.
	A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Cui J.; Ning Y.; Li T.; Zhang Y.; Liu G.; Zhang X.; Wang Z.; Shi J.; Kong P.; Qin L.; Liu Y.; Wang L. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m 150m and 100m-diameter with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power threshold current lasing spectra far-field distribution etc. 2008 SPIE.
	Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Liang X.; Qin L.; He C.; Ma Q.; Ning Y.; Wang L. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 Temperature characteristics of several familiar high power diode lasers with broad area whose wavelength was separately 808 nm 810 nm 940 nm and 980 nm were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures different structures were attempted. For the 808 nm structure we tried different barrier thicknesses. For the 810 nm structure different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.
	Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.

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