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	A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE)
	Cui J. ; Ning Y. ; Li T. ; Zhang Y. ; Liu G. ; Zhang X. ; Wang Z. ; Shi J. ; Kong P. ; Qin L. ; Liu Y. ; Wang L.
	2008
会议名称	Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008
会议地点	Hangzhou, China
关键词	A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m 150m and 100m-diameter with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power threshold current lasing spectra far-field distribution etc. 2008 SPIE.
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/34029]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Cui J.,Ning Y.,Li T.,et al. A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE)[C]. 见:Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008. Hangzhou, China.

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