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	Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE)
	Liang X. ; Qin L. ; He C. ; Ma Q. ; Ning Y. ; Wang L.
	2008
会议名称	Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008
会议地点	Hangzhou, China
关键词	Temperature characteristics of several familiar high power diode lasers with broad area whose wavelength was separately 808 nm 810 nm 940 nm and 980 nm were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures different structures were attempted. For the 808 nm structure we tried different barrier thicknesses. For the 810 nm structure different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/34031]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Liang X.,Qin L.,He C.,et al. Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE)[C]. 见:Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008. Hangzhou, China.

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