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	Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE)
	Jinjiang C. ; Yongqiang N. ; Te L. ; Guangyu L. ; Yan Z. ; Biao P. ; Yanfang S. ; Lijun W.
	2007
会议名称	Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007
会议地点	Wuhan, China
关键词	Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33933]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Jinjiang C.,Yongqiang N.,Te L.,et al. Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE)[C]. 见:Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007. Wuhan, China.

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