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科研机构
半导体研究所 [34]
内容类型
期刊论文 [31]
会议论文 [3]
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2011 [1]
2010 [1]
2008 [2]
2005 [1]
2004 [1]
2003 [3]
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半导体物理 [34]
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Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
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浏览/下载:50/2
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108
Zhu YH (Zhu Yuan-Hui)
;
Xu Q (Xu Qiang)
;
Fan WJ (Fan Wei-Jun)
;
Wang JW (Wang Jian-Wei)
收藏
  |  
浏览/下载:67/3
  |  
提交时间:2010/05/07
ALLOYS
GE
Dislocation scattering in AlxGa1-xN/GaN heterostructures
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ
;
Liu, XL
;
Han, XX
;
Yuan, HR
;
Wang, J
;
Guo, Y
;
Song, HP
;
Zheng, GL
;
Wei, HY
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
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  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
aluminium compounds
dislocation density
electron mobility
gallium compounds
III-V semiconductors
interface roughness
semiconductor heterojunctions
two-dimensional electron gas
wide band gap semiconductors
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
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  |  
浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y
;
Zhu XP
;
Song GF
;
Cao Q
;
Guo L
;
Li YZ
;
Chen LH
收藏
  |  
浏览/下载:164/42
  |  
提交时间:2010/03/29
quantum well intermixing
The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
期刊论文
journal of physics-condensed matter, 2004, 卷号: 16, 期号: 1, 页码: 29-35
Gong Z
;
Fang ZD
;
Xu XH
;
Miao ZH
;
Ni HQ
;
Niu ZC
;
Feng SL
收藏
  |  
浏览/下载:147/48
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers
期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:
Xu YQ
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  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
GAINNAS
LUMINESCENCE
DIODES
ALLOYS
The study of the behavior of exciton and photon within semiconductor microcavity under hydrostatic pressure
期刊论文
spectroscopy and spectral analysis, 2003, 卷号: 23, 期号: 2, 页码: 223-225
Zhang JD
;
Chen JH
;
Deng YM
;
An L
;
Zhang H
;
Yang FH
;
Li GH
;
Zheng HZ
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  |  
浏览/下载:42/0
  |  
提交时间:2010/08/12
semiconductor microcavity
hydrostatic pressure spectrum
Rabi splitting
QUANTUM MICROCAVITY
PHOTOLUMINESCENCE
Calculation of the hourly and daily radiation incident on three step tracking planes
期刊论文
energy conversion and management, 2003, 卷号: 44, 期号: 12, 页码: 1999-2011
Ai B
;
Shen H
;
Ban Q
;
Ji B
;
Liao XB
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/08/12
azimuth three step tracking
hour angle three step tracking
PV system design
SOLAR-RADIATION
TILTED SURFACES
INCLINED SURFACES
MODELS
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391
Xu SJ
;
Zheng LX
;
Cheung SH
;
Xie MH
;
Tong SY
;
Yang H
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
VAPOR-PHASE EPITAXY
CUBIC GAN
BINDING-ENERGY
PHOTOLUMINESCENCE
PRESSURE
ELECTRON
GAAS
ALN
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