Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

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	Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
	Zhong, L ; Ma, XY
刊名	japanese journal of applied physics
	2008
卷号	47 期号:9 页码:7026-7031 part 1
关键词	tensile strain GaAsP/GaInP photoluminescence quantum well laser diodes LP-MOCVD
ISSN号	0021-4922
通讯作者	zhong, l, chinese acad sci, inst semicond, natl engn res ctr optoelect devices, beijing 100083, peoples r china. 电子邮箱地址: zhongli@semi.ac.cn
中文摘要	tensile-strained gaasp/gainp single quantum well (qw) laser diode (i-d) structures have been grown by low-pressure metal organic chemical vapor deposition (lp-mocvd) and related photoluminescence (pl) properties have been investigated in detail. the samples have the same well thickness of 16 nm but different p compositions in a gaasp qw. two peaks in room temperature (rt) pl spectra are observed for samples with a composition larger than 0.10. temperature and excitation-power-dependent pl spectra have been measured for a sample with it p composition of 0.15. it is found that the two peaks have a 35 mev energy separation independent of temperature and only the low-energy peak exists below 85 k. additionally, both peak intensities exhibit a monotonous increase as excitation power increases. analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). a theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. the temperature dependence of pl intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and ill states.
学科主题	半导体物理
收录类别	SCI
资助信息	national key technologies r&d programme of china 2004ba313c 863 high technology research and development program of china 2006aa030101 this work was supported by the national key technologies r&d programme of china (grant no. 2004ba313c) and the "863" high technology research and development program of china (grant no. 2006aa030101).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6448]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhong, L,Ma, XY. Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition[J]. japanese journal of applied physics,2008,47(9):7026-7031 part 1.
APA	Zhong, L,&Ma, XY.(2008).Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition.japanese journal of applied physics,47(9),7026-7031 part 1.
MLA	Zhong, L,et al."Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition".japanese journal of applied physics 47.9(2008):7026-7031 part 1.