Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers

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	Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
	Xu SJ ; Zheng LX ; Cheung SH ; Xie MH ; Tong SY ; Yang H
刊名	applied physics letters
	2002
卷号	81 期号:23 页码:4389-4391
关键词	MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY CUBIC GAN BINDING-ENERGY PHOTOLUMINESCENCE PRESSURE ELECTRON GAAS ALN
ISSN号	0003-6951
通讯作者	xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china.
中文摘要	linewidth broadening of exciton luminescence in wurtzite and zinc-blende gan epilayers was investigated as a function of temperature with photoluminescence. a widely accepted theoretical model was used to fit the experimental data, so that the coupling parameters between exciton and acoustic and longitudinal optical phonons were obtained for both structures. it was found that the coupling constants of both exciton-acoustic optical phonon coupling and exciton-longitudinal optical phonon coupling for zinc-blende gan are almost twice as much as the corresponding values of wurtzite gan. these results show that the relatively strong exciton-phonon scattering seems to be characteristic to zinc-blende gan film. (c) 2002 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11730]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu SJ,Zheng LX,Cheung SH,et al. Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers[J]. applied physics letters,2002,81(23):4389-4391.
APA	Xu SJ,Zheng LX,Cheung SH,Xie MH,Tong SY,&Yang H.(2002).Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers.applied physics letters,81(23),4389-4391.
MLA	Xu SJ,et al."Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers".applied physics letters 81.23(2002):4389-4391.