The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates

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	The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
	Gong Z ; Fang ZD ; Xu XH ; Miao ZH ; Ni HQ ; Niu ZC ; Feng SL
刊名	journal of physics-condensed matter
	2004
卷号	16 期号:1 页码:29-35
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	0953-8984
通讯作者	gong, z, chinese acad sci, inst semicond, natl lab superlattice & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhgong@red.semi.ac.cn
中文摘要	self-aligned inas quantum wires (qwrs) or three-dimensional (3d) islands are fabricated on gaas(331)a substrates by molecular beam epitaxy (mbe). inas qwrs are selectively grown on the step edges formed by gaas layers. the surface morphology of inas nanostructures is carefully investigated by atomic force microscopy (afm) measurements. different growth conditions, such as substrate temperature, growth approaches, and inas coverage, exert a great effect on the morphology of inas islands. low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3d islands. the shape transition is attributed to the trade-off between surface energy and strain energy. a qualitative agreement of our experimental data with the theoretical results derived from the model proposed by tersoff and tromp is achieved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8184]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gong Z,Fang ZD,Xu XH,et al. The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates[J]. journal of physics-condensed matter,2004,16(1):29-35.
APA	Gong Z.,Fang ZD.,Xu XH.,Miao ZH.,Ni HQ.,...&Feng SL.(2004).The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates.journal of physics-condensed matter,16(1),29-35.
MLA	Gong Z,et al."The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates".journal of physics-condensed matter 16.1(2004):29-35.