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科研机构
半导体研究所 [11]
内容类型
期刊论文 [8]
会议论文 [3]
发表日期
2009 [1]
2008 [1]
2004 [1]
2002 [1]
2001 [1]
2000 [3]
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学科主题
半导体材料 [11]
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Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition
期刊论文
surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456
作者:
Tan HR
;
Zhang XW
;
You JB
;
Fan YM
收藏
  |  
浏览/下载:264/33
  |  
提交时间:2010/03/08
Cubic boron nitride
Stress relaxation
Ion beam assisted deposition
Fourier transformed infrared spectroscopy
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG
;
Kong, GL
;
Zeng, XB
;
Hao, HY
;
Liu, FZ
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  |  
浏览/下载:106/29
  |  
提交时间:2010/03/08
silicon
conductivity
chemical vapor deposition
microcrystallinity
absorption
photoconductivity
Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well
期刊论文
journal of vacuum science & technology b, 2004, 卷号: 22, 期号: 6, 页码: 2568-2573
Li, JM
;
Lu, YW
;
Li, DB
;
Han, XX
;
Zhu, QS
;
Liu, XL
;
Wang, ZG
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/03/17
RAY PHOTOEMISSION SPECTROSCOPY
Progress of Si-based nanocrystalline luminescent materials
期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC
;
Zhao XW
;
Fu GS
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  |  
浏览/下载:86/0
  |  
提交时间:2010/08/12
Si-based nanomaterials
fabricated method
structural characterization
light emitting mechanism
Si-based photoelectronic devices
CHEMICAL-VAPOR-DEPOSITION
SELF-ASSEMBLING FORMATION
SILICON QUANTUM DOTS
LASER-ABLATION
OPTICAL-ABSORPTION
POROUS SILICON
LIGHT-EMISSION
PHOTOLUMINESCENCE
FABRICATION
OXYGEN
Indium doping effect on GaN in the initial growth stage
期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:
Han PD
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  |  
浏览/下载:157/29
  |  
提交时间:2010/08/12
GaN
indium doping
initial growth stage
morphology
optical transmission
photoluminescence
VAPOR-PHASE EPITAXY
BUFFER LAYER
FILMS
SAPPHIRE
DEPOSITION
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy
期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 461-465
Gao F
;
Huang DD
;
Li JP
;
Lin YX
;
Kong MY
;
Sun DZ
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
Si growth rate
P doping
PH3 flow rate
P segregation
GSMBE
CHEMICAL-VAPOR-DEPOSITION
SI1-XGEX
PHOSPHORUS
SI2H6
DISILANE
SI(100)
MBE
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix
会议论文
4th international conference on thin film physics and applications, shanghai, peoples r china, may 08-11, 2000
Ma ZX
;
Liao XB
;
Zheng WM
;
Yu J
;
Chu JH
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  |  
浏览/下载:16/0
  |  
提交时间:2010/10/29
nanocrystalline silicon
Raman scattering
infrared absorption
phonon confinement
MICROCRYSTALLINE SILICON
POLYCRYSTALLINE SILICON
FILMS
A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4
期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 245-249
Yu Z
;
Li DZ
;
Cheng BW
;
Huang CJ
;
Lei ZL
;
Yu JZ
;
Wang QM
;
Liang JW
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
SiGe/Si
epitaxial growth
surface reaction kinetics
UHV/CVD system
CHEMICAL VAPOR-DEPOSITION
ATOMIC-HYDROGEN
ADSORPTION
SI(100)
SI2H6
SIH4
MECHANISMS
DESORPTION
PHASE
FILMS
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
Er-doped silica glass
sol-gel process
photoluminescence
PLANAR WAVE-GUIDES
MOLECULAR-BEAM EPITAXY
CRYSTAL SILICON
IMPLANTED SI
LUMINESCENCE
ELECTROLUMINESCENCE
FABRICATION
IMPURITIES
FILMS
IONS
High-concentration hydrogen in unintentionally doped GaN
期刊论文
journal of crystal growth, 1998, 卷号: 189, 期号: 0, 页码: 566-569
Zhang JP
;
Wang XL
;
Sun DZ
;
Li XB
;
Kong MY
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/08/12
gallium nitride
gas source molecular beam epitaxy
hydrogen
autodoping
FILMS
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