A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

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	A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4
	Yu Z ; Li DZ ; Cheng BW ; Huang CJ ; Lei ZL ; Yu JZ ; Wang QM ; Liang JW
刊名	journal of crystal growth
	2000
卷号	218 期号:2-4 页码:245-249
关键词	SiGe/Si epitaxial growth surface reaction kinetics UHV/CVD system CHEMICAL VAPOR-DEPOSITION ATOMIC-HYDROGEN ADSORPTION SI(100) SI2H6 SIH4 MECHANISMS DESORPTION PHASE FILMS
ISSN号	0022-0248
通讯作者	yu z,apt 3,83 univ gardens,charlottesville,va 22903 usa.
中文摘要	the surface reaction mechanism of si1-xgex/si growth using sih4 and geh4 in uhv/cvd system was studied. the saturated adsorption and desorption of sih4 from si(1 0 0) surface was investigated with the help of tpd and rheed, and it was found that all the 4 hydrogen atoms of one sih4 molecule were adsorbed to the si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. the analysis of the reaction of geh4 was also done. a new surface reaction kinetic model on si1-xgex/si epitaxial growth under uhv conditions by sih4/geh4 was proposed based on these studies. the predictions of the model were verified by the experimental results. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12420]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu Z,Li DZ,Cheng BW,et al. A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4[J]. journal of crystal growth,2000,218(2-4):245-249.
APA	Yu Z.,Li DZ.,Cheng BW.,Huang CJ.,Lei ZL.,...&Liang JW.(2000).A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4.journal of crystal growth,218(2-4),245-249.
MLA	Yu Z,et al."A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4".journal of crystal growth 218.2-4(2000):245-249.