Preparation and characterization of erbium doped sol-gel silica glasses

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Preparation and characterization of erbium doped sol-gel silica glasses
	Lei HB ; Yang QQ ; Ou HY ; Chen BW ; Yu JZ ; Wang QM ; Xie DT ; Wu JG ; Xu DF ; Xu GX
	1999
会议名称	conference on rare-earth-doped materials and devices iii
会议日期	jan 27-28, 1999
会议地点	san jose, ca
关键词	Er-doped silica glass sol-gel process photoluminescence PLANAR WAVE-GUIDES MOLECULAR-BEAM EPITAXY CRYSTAL SILICON IMPLANTED SI LUMINESCENCE ELECTROLUMINESCENCE FABRICATION IMPURITIES FILMS IONS
页码	74-80
通讯作者	lei hb chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	erbium-doped silica glasses were made by sol-gel process. intensive photoluminescence (pl) spectra from the er-doped silica glasses at room temperature were measured. a broadband peak at 1535 ma, corresponding to the i-4(13/2)-i-4(15/2) transition, its full width at half-maximum (fwhm) of 10 nm, and a shoulder at 1546 nm in the pl spectra were observed. at lower temperatures, main line of 1535 nm and another line of 1552 mn instead of 1546 nm appear. so two types of luminescence centers must exist in the samples at different temperature. the intensity of main line does not decrease obviously with increasing temperature. by varying the er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. luminescence intensity decreases with increasing erbium concentration. cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. extended x-ray absorption fine structure measurements were carried out. it was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.
英文摘要	erbium-doped silica glasses were made by sol-gel process. intensive photoluminescence (pl) spectra from the er-doped silica glasses at room temperature were measured. a broadband peak at 1535 ma, corresponding to the i-4(13/2)-i-4(15/2) transition, its full width at half-maximum (fwhm) of 10 nm, and a shoulder at 1546 nm in the pl spectra were observed. at lower temperatures, main line of 1535 nm and another line of 1552 mn instead of 1546 nm appear. so two types of luminescence centers must exist in the samples at different temperature. the intensity of main line does not decrease obviously with increasing temperature. by varying the er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. luminescence intensity decreases with increasing erbium concentration. cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. extended x-ray absorption fine structure measurements were carried out. it was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:04z (gmt). no. of bitstreams: 1 2969.pdf: 472077 bytes, checksum: 9236d2f4d889c18471db9362edeefb30 (md5) previous issue date: 1999; spie.; def adv res projects agcy.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; def adv res projects agcy.
会议录	rare-earth-doped materials and devices iii, 3622
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	半导体材料
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3092-7
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13783]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lei HB,Yang QQ,Ou HY,et al. Preparation and characterization of erbium doped sol-gel silica glasses[C]. 见:conference on rare-earth-doped materials and devices iii. san jose, ca. jan 27-28, 1999.