Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix
	Ma ZX ; Liao XB ; Zheng WM ; Yu J ; Chu JH
	2000
会议名称	4th international conference on thin film physics and applications
会议日期	may 08-11, 2000
会议地点	shanghai, peoples r china
关键词	nanocrystalline silicon Raman scattering infrared absorption phonon confinement MICROCRYSTALLINE SILICON POLYCRYSTALLINE SILICON FILMS
页码	258-261
通讯作者	ma zx chinese acad sci inst semicond ctr fis mat condensada state key lab surface phys pob 912 beijing 100083 peoples r china.
中文摘要	structural dependence on annealing of a-siox:h was studied by using infrared absorption and raman scattering. the appearance of raman peaks in the range of 513-519cm(-1) after 1170 degreesc annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. the raman spectra also show the existence of amorphous-like silicon phase, which is associated with si-si bond re-construction at boundaries of silicon nanocrystallites. the presence of the shoulder at 980cm(-1) of si-o-si stretching vibration at 1085cm(-1) in infrared spectra imply that except that sio2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesc. this sub-oxide phase is located at the interface between si crystallites and sio2, and thus support the shell model for the mixed structures of si grains and sio2 matrix.
英文摘要	structural dependence on annealing of a-siox:h was studied by using infrared absorption and raman scattering. the appearance of raman peaks in the range of 513-519cm(-1) after 1170 degreesc annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. the raman spectra also show the existence of amorphous-like silicon phase, which is associated with si-si bond re-construction at boundaries of silicon nanocrystallites. the presence of the shoulder at 980cm(-1) of si-o-si stretching vibration at 1085cm(-1) in infrared spectra imply that except that sio2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesc. this sub-oxide phase is located at the interface between si crystallites and sio2, and thus support the shell model for the mixed structures of si grains and sio2 matrix.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:51z (gmt). no. of bitstreams: 1 2884.pdf: 298237 bytes, checksum: 8238f74f5b7395903438632d60ed38d3 (md5) previous issue date: 2000; chinese phys soc.; shanghai phys soc.; natl lab infrared phys.; acad sinica, shanghai inst tech phys.; natl nat sci fdn china.; spie.; abdus salam int ctr theoret phys.; satis vacuum ind vertriebs ag.; chinese acad sci, inst semicond, ctr fis mat condensada, state key lab surface phys, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese phys soc.; shanghai phys soc.; natl lab infrared phys.; acad sinica, shanghai inst tech phys.; natl nat sci fdn china.; spie.; abdus salam int ctr theoret phys.; satis vacuum ind vertriebs ag.
会议录	fourth international conference on thin film physics and applications, 4086
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	半导体材料
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3729-8
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13713]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma ZX,Liao XB,Zheng WM,et al. Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix[C]. 见:4th international conference on thin film physics and applications. shanghai, peoples r china. may 08-11, 2000.