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科研机构
半导体研究所 [43]
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期刊论文 [33]
会议论文 [10]
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2010 [1]
2009 [2]
2008 [2]
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2005 [1]
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半导体材料 [43]
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Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire
期刊论文
journal of the electrochemical society, 2010, 卷号: 157, 期号: 7, 页码: h721-h726
Wei TB (Wei T. B.)
;
Hu Q (Hu Q.)
;
Duan RF (Duan R. F.)
;
Wei XC (Wei X. C.)
;
Yang JK (Yang J. K.)
;
Wang JX (Wang J. X.)
;
Zeng YP (Zeng Y. P.)
;
Wang GH (Wang G. H.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:294/52
  |  
提交时间:2010/06/18
atomic force microscopy
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H
;
Wang SM
;
Zhao QX
;
Sadeghi M
;
Larsson A
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  |  
浏览/下载:182/35
  |  
提交时间:2010/03/08
Quantum well
Dilute nitride
Rapid thermal annealing
InGaAs
GaInNAs
Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 2, 页码: 278-281
作者:
Song HP
;
Jiao CM
;
Wei HY
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  |  
浏览/下载:201/82
  |  
提交时间:2010/03/08
Nanostructures
Metalorganic chemical vapor deposition
Zinc compounds
Semiconducting II-VI materials
Characterization of Phosphorus Diffused ZnO Bulk Single Crystals
期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1674-1678
Zhang Rui
;
Zhang Fan
;
Zhao Youwen
;
Dong Zhiyuan
;
Yang Jun
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  |  
浏览/下载:12/0
  |  
提交时间:2010/11/23
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:29/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659
Gao HY (Gao Haiyong)
;
Yan FW (Yan Fawang)
;
Li JM (Li Jinmin)
;
Zeng YP (Zeng Yiping)
;
Wang JX (Wang Junxi)
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
High-precision determination of lattice constants and structural characterization of InN thin films
期刊论文
journal of vacuum science & technology a, 2006, 卷号: 24, 期号: 2, 页码: 275-279
Wu MF
;
Zhou SQ
;
Vantomme A
;
Huang Y
;
Wang H
;
Yang H
收藏
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浏览/下载:110/0
  |  
提交时间:2010/04/11
X-RAY-DIFFRACTION
BAND-GAP
EPITAXIAL LAYERS
INDIUM NITRIDE
HEXAGONAL INN
CUBIC INN
GROWTH
PARAMETERS
INGAN
PHASE
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:102/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 6, 页码: 2153-2158
Zhang CG
;
Chen WD
;
Bian LF
;
Song SF
;
Hsu CC
收藏
  |  
浏览/下载:82/0
  |  
提交时间:2010/04/11
gallium nitride films
gallium oxide
carbonized-reaction
NITRIDE THIN-FILMS
TEMPERATURE
SUBSTRATE
SI(111)
Growth and characterization of InN on sapphire substrate by RF-MBE
期刊论文
journal of crystal growth, 2005, 卷号: 276, 期号: 3-4, 页码: 401-406
Xiao, HL
;
Wang, XL
;
Wang, JX
;
Zhang, NH
;
Liu, HX
;
Zeng, YP
;
Li, JM
;
Wang, ZG
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  |  
浏览/下载:33/0
  |  
提交时间:2010/03/17
photoluminescence
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