Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

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	Characterization of Phosphorus Diffused ZnO Bulk Single Crystals
	Zhang Rui ; Zhang Fan ; Zhao Youwen ; Dong Zhiyuan ; Yang Jun
刊名	半导体学报
	2008
卷号	29 期号:9 页码:1674-1678
中文摘要	phosphorus was diffused into cvt grown undoped zno bulk single crystals at 550 and 800℃ in a closed quartz tube. the p-diffused zno single crystals were characterized by the hall effect, x-ray photoelectron spectroscopy （xps）, photoluminescence spectroscopy （pl）, and raman scattering. the p-diffused zno single crystals are n-type and have higher free electron concentration than undoped zno, especially for the sample diffused at 800℃. the pl measurement reveals defect related visible broad emissions in the range of 420-550nm in the p-diffused zno samples. the xps result suggests that most of the p atoms substitute in the zn site after they diffuse into the zno single crystal at 550℃ ,while the p atom seems to occupy the o site in the zno samples diffused at 800℃. a high concentration of shallow donor defect forms in the p-diffused zno,resulting in an apparent increase of free electron concentration.
学科主题	半导体材料
收录类别	CSCD
资助信息	国家自然科学基金资助项目（批准号
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15959]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang Rui,Zhang Fan,Zhao Youwen,et al. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals[J]. 半导体学报,2008,29(9):1674-1678.
APA	Zhang Rui,Zhang Fan,Zhao Youwen,Dong Zhiyuan,&Yang Jun.(2008).Characterization of Phosphorus Diffused ZnO Bulk Single Crystals.半导体学报,29(9),1674-1678.
MLA	Zhang Rui,et al."Characterization of Phosphorus Diffused ZnO Bulk Single Crystals".半导体学报 29.9(2008):1674-1678.