Growth and characterization of InN on sapphire substrate by RF-MBE

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	Growth and characterization of InN on sapphire substrate by RF-MBE
	Xiao, HL ; Wang, XL ; Wang, JX ; Zhang, NH ; Liu, HX ; Zeng, YP ; Li, JM ; Wang, ZG
刊名	journal of crystal growth
	2005
卷号	276 期号:3-4 页码:401-406
关键词	photoluminescence
ISSN号	0022-0248
通讯作者	xiao, hl, chinese acad sci, inst semicond, novel mat grp, pob 912, beijing 100083, peoples r china. 电子邮箱地址: hlxiao@red.semi.ac.cn
中文摘要	indium nitride (inn) films were grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). atomic force microscopy (afm), reflection high-energy electron diffraction (rheed), double-crystal x-ray diffraction (dcxrd) and photoluminescence (pl) spectroscopy were used to characterize the inn films. the results show that the inn films have good crystallinity, with full-width at half-maximum (fwhm) of inn (0 0 0 2) dcxrd peak being 14 arcmin. at room temperature, a strong pl peak at 0.79ev was observed. at 1.9ev or so, no peak was observed. in addition, it is found that the inn films grown with low-temperature (lt) inn buffer layer are of better quality than those without lt-inn buffer layer. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8798]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xiao, HL,Wang, XL,Wang, JX,et al. Growth and characterization of InN on sapphire substrate by RF-MBE[J]. journal of crystal growth,2005,276(3-4):401-406.
APA	Xiao, HL.,Wang, XL.,Wang, JX.,Zhang, NH.,Liu, HX.,...&Wang, ZG.(2005).Growth and characterization of InN on sapphire substrate by RF-MBE.journal of crystal growth,276(3-4),401-406.
MLA	Xiao, HL,et al."Growth and characterization of InN on sapphire substrate by RF-MBE".journal of crystal growth 276.3-4(2005):401-406.