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Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104
Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min)
收藏  |  浏览/下载：257/64  |  提交时间：2010/05/24
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC; Zhao, YW; Dong, ZY; Li, JM
收藏  |  浏览/下载：53/0  |  提交时间：2010/03/08
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo)
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29
Generation and suppression of deep level defects in InP 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479
Zhao YW (Zhao You-Wen); Dong ZY (Dong Zhi-Yuan)
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29
Low -temperature preparation of ZnO films on Si substrates by MOCVD 期刊论文
功能材料与器件学报, 2006, 卷号: 12, 期号: 1, 页码: 63-66
作者:  Wang Jun;  Wang Jun
收藏  |  浏览/下载：7/0  |  提交时间：2010/11/23
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.); Li CJ (Li C. J.)
收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX
收藏  |  浏览/下载：203/19  |  提交时间：2010/03/29
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ
收藏  |  浏览/下载：115/18  |  提交时间：2010/03/29
Origin of deep level defect related photoluminescence in annealed InP 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123519
Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Miao, SS (Miao, Shanshan); Deng, AH (Deng, Aihong); Yang, J (Yang, Jun); Wang, B (Wang, Bo)
收藏  |  浏览/下载：59/0  |  提交时间：2010/03/29

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