Generation and suppression of deep level defects in InP

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	Generation and suppression of deep level defects in InP
	Zhao YW (Zhao You-Wen) ; Dong ZY (Dong Zhi-Yuan)
刊名	acta physica sinica
	2007
卷号	56 期号:3 页码:1476-1479
关键词	indium phosphide
ISSN号	issn: 1000-3290
通讯作者	zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn
中文摘要	deep level defects in as-grown and annealed n-type and semi-insulating inp have been studied. after annealing in phosphorus ambient, a large quantity of deep level defects were generated in both n-type and semi-insulating inp materials. in contrast, few deep level defects exist in inp after annealing in iron phosphide ambient. the generation of deep level defects has direct relation with in-diffusion of iron and phosphorus in the annealing process. the in-diffused phosphorus and iron atoms occupy indium sites in the lattice, resulting in the formation of p anti-site defects and iron deep acceptors, respectively. t e results indicate that iron atoms fully occupy indium sites and suppress the formation of indium vacancy and p anti-site, etc., whereas indium vacancies and p anti-site defects. are formed after annealing in phosphor-us ambient. the nature of the deep level defects in inp has been studied based on the results.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9580]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao YW ,Dong ZY . Generation and suppression of deep level defects in InP[J]. acta physica sinica,2007,56(3):1476-1479.
APA	Zhao YW ,&Dong ZY .(2007).Generation and suppression of deep level defects in InP.acta physica sinica,56(3),1476-1479.
MLA	Zhao YW ,et al."Generation and suppression of deep level defects in InP".acta physica sinica 56.3(2007):1476-1479.