Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

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	Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
	Zhao, YW ; Dong, ZY ; Duan, ML ; Sun, WR ; Yang, ZX
	2006
会议名称	3rd asian conference on crystal growth and crystal technology (cgct-3)
会议日期	oct 16-19, 2005
会议地点	beijing, peoples r china
关键词	indium phosphide
页码	24: 75-77 sp. iss. si
通讯作者	zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn
中文摘要	deep level defects in as-grown and annealed si-inp samples were investigated by thermally stimulated current spectroscopy. correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in si-inp were revealed. an optimized crystal growth condition for high quality si-inp was demonstrated based on the experimental results.
英文摘要	deep level defects in as-grown and annealed si-inp samples were investigated by thermally stimulated current spectroscopy. correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in si-inp were revealed. an optimized crystal growth condition for high quality si-inp was demonstrated based on the experimental results.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese assoc crystal growth.; crystal mat shandong univ, state key lab.; cas, tech inst phys & chem.; res inst synthet crystal.; japanese soc promot sci, 161 comm.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	其他
会议主办者	chinese assoc crystal growth.; crystal mat shandong univ, state key lab.; cas, tech inst phys & chem.; res inst synthet crystal.; japanese soc promot sci, 161 comm.
会议录	journal of rare earths
会议录出版者	metallurgical industry press ; 2 xinjiekouwai dajie, beijing 100088, peoples r china
会议录出版地	2 xinjiekouwai dajie, beijing 100088, peoples r china
学科主题	半导体材料
语种	英语
ISSN号	1002-0721
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10032]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, YW,Dong, ZY,Duan, ML,et al. Growth of high quality semi-insulating InP single crystal by suppression of compensation defects[C]. 见:3rd asian conference on crystal growth and crystal technology (cgct-3). beijing, peoples r china. oct 16-19, 2005.