Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

	Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
	Hou QF (Hou Qi-Feng) ; Wang XL (Wang Xiao-Liang) ; Xiao ; HL (Xiao Hong-Ling) ; Wang CM (Wang Cui-Mei) ; Yang CB (Yang Cui-Bai) ; Li JM (Li Jin-Min)
刊名	chinese physics letters
	2010
卷号	27 期号:5 页码:art. no. 057104
关键词	N-TYPE GAN DEEP LEVELS SELENIDE DEFECTS
通讯作者	hou, qf, chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: qfhou@semi.ac.cn
合作状况	其它
英文摘要	the optical quenching of photoconductivity under dual illumination in gan samples with different resistivity is investigated to reveal the variation of deep levels. the samples are grown by metal organic chemical vapour deposition without intentional doping. quenching bands centered at 1.35 ev, 1.55 ev, 1.98 ev, and 2.60 ev are observed. it is found that the 1.98 ev quenching band is dominated in all the samples and the 2.60 ev band is observed only in the high-resistivity samples. the possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60 ev are discussed. it is suggested that the defect level responsible for quenching at 2.60 ev plays an important role for the enhancement of resistivity.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t06:12:17z no. of bitstreams: 1 variation of optical quenching of photoconductivity with resistivity in unintentional doped gan.pdf: 458168 bytes, checksum: 7011fa935fabd2cf08e8a2fea18b2c99 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:16:49z (gmt) no. of bitstreams: 1 variation of optical quenching of photoconductivity with resistivity in unintentional doped gan.pdf: 458168 bytes, checksum: 7011fa935fabd2cf08e8a2fea18b2c99 (md5); made available in dspace on 2010-05-24t07:16:49z (gmt). no. of bitstreams: 1 variation of optical quenching of photoconductivity with resistivity in unintentional doped gan.pdf: 458168 bytes, checksum: 7011fa935fabd2cf08e8a2fea18b2c99 (md5) previous issue date: 2010; chinese academy of sciences yyyj-0701-02 is-cas2008t01 iscas2009l01 iscas2009l02; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences yyyj-0701-02 is-cas2008t01 iscas2009l01 iscas2009l02
语种	英语
公开日期	2010-05-24 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11237]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Hou QF ,Wang XL ,Xiao,et al. Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN[J]. chinese physics letters,2010,27(5):art. no. 057104.
APA	Hou QF .,Wang XL .,Xiao.,HL .,Wang CM .,...&Li JM .(2010).Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.chinese physics letters,27(5),art. no. 057104.
MLA	Hou QF ,et al."Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN".chinese physics letters 27.5(2010):art. no. 057104.