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CORC

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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:  Yang JK;  Wei TB;  Duan RF
收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载：182/43  |  提交时间：2010/03/08
The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition 期刊论文
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL; Sun, XH; Zha, XZ; Su, FH; Li, GH; Wu, XG; Wu, J; Wu, R; Liu, J
收藏  |  浏览/下载：46/1  |  提交时间：2010/03/08
Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1254-1257
作者:  Liu Xingfang;  Ning Jin;  Zhao Yongmei
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS
收藏  |  浏览/下载：55/4  |  提交时间：2010/03/08
Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate 期刊论文
journal of crystal growth, 2005, 卷号: 276, 期号: 3-4, 页码: 381-388
Cong, GW; Lu, Y; Peng, WQ; Liu, XL; Wang, XH; Wang, ZG
收藏  |  浏览/下载：93/0  |  提交时间：2010/03/17
Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate 期刊论文
journal of crystal growth, 2004, 卷号: 263, 期号: 1-4, 页码: 4-11
作者:  Li DB;  Han XX
收藏  |  浏览/下载：61/21  |  提交时间：2010/03/09
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者:  Zhang SM
收藏  |  浏览/下载：252/65  |  提交时间：2010/08/12
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12

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