Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation

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	Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
	Xu B; Jin P; Ye XL
刊名	journal of crystal growth
	2011
卷号	318 期号:1 页码:572-575
关键词	Atom force microscopy Nanostructures Molecular-beam epitaxy Nanomaterials Semiconducting gallium arsenide QUANTUM-DOTS ANODIC ALUMINA ARRAYS PLACEMENT INAS
ISSN号	0022-0248
通讯作者	qu, sc, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. qsc@semi.ac
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	ordered in(ga)as nanostructures on gaas are emerging as an important new class of optoelectronic and electronic materials. in this work, patterned gaas (1 0 0) substrates were fabricated by masked indium ion implantation and subsequent annealing under arsenic capping. anodic aluminum oxide templates are used as masks for indium ion implantation on gaas substrate. the masked indium ion implantation substrate is used as a strain pattern for the nucleation of three-dimensional in(ga)as islands on the gaas substrate. molecular-beam epitaxy growth of self-assembled in(ga)as/gaas quantum dots on the patterned gaas (1 0 0) substrates has been studied. by adjusting the growth conditions, surprising alignment and pronounced round coalescence of dots under specific condition are realized. an explanation for the role of patterned substrate in determining the shape of the nanostructure is proposed. our approach provides a general yet versatile route towards the creation of a range of nanostructure materials. (c) 2010 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21253]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Xu B,Jin P,Ye XL. Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation[J]. journal of crystal growth,2011,318(1):572-575.
APA	Xu B,Jin P,&Ye XL.(2011).Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation.journal of crystal growth,318(1),572-575.
MLA	Xu B,et al."Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation".journal of crystal growth 318.1(2011):572-575.