Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate

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	Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate
	Cong, GW ; Lu, Y ; Peng, WQ ; Liu, XL ; Wang, XH ; Wang, ZG
刊名	journal of crystal growth
	2005
卷号	276 期号:3-4 页码:381-388
关键词	substrates
ISSN号	0022-0248
通讯作者	cong, gw, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: gwcong@semi.ac.cn
中文摘要	we have investigated the effect of the thickness and layer number of the low-temperature a1n interlayer (lt-a1n il) on the stress relaxation and the crystal quality of gan epilayers grown on si (111) substrate by metalorganic chemical vapor deposition. it is found that the stress decreases with the increase of the lt-ain il thickness, but the crystal quality of the gan epilayer goes worse quickly when the lt-ain il thickness is larger than 16 nm. this is because the increase of the lt-ain il thickness will increase the coalescence thickness of its upper gan layer, which sensitively affects the crystal quality of the epilayer. using multiple lt-ain ils is an effective method not only to reduce the stress, but also to improve the crystal quality of the gan epilayer. with the increase of the interlayer number, the probability that dislocations are blocked increases and the probability that dislocations are produced at interfaces decreases. thus, dislocations in the most upper part of gan are reduced, resulting in the improvement of the crystal quality. finally, it is suggested that when the total thickness of the epilayer is fixed, both the thickness and the number of the lt-ain il should be carefully designed to reduce the stress and improve the crystal quality of the epilayer simultaneously. (c) 2004 elsevier b.v.. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8796]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Cong, GW,Lu, Y,Peng, WQ,et al. Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate[J]. journal of crystal growth,2005,276(3-4):381-388.
APA	Cong, GW,Lu, Y,Peng, WQ,Liu, XL,Wang, XH,&Wang, ZG.(2005).Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate.journal of crystal growth,276(3-4),381-388.
MLA	Cong, GW,et al."Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate".journal of crystal growth 276.3-4(2005):381-388.