Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate
	Li DB; Han XX
刊名	journal of crystal growth
	2004
卷号	263 期号:1-4 页码:4-11
关键词	substrates
ISSN号	0022-0248
通讯作者	lu, y, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yuanlu@red.semi.ac.cn
中文摘要	we have studied the influence of the growth temperature of the high-temperature (ht) ain buffer layer on the properties of the gan epilayer which was grown on si(111) substrate by metalorganic chemical vapor deposition (mocvd). it was found that the crystal quality of the gan epilayer strongly depends on the growth temperature of the ht-ain buffer. the growth temperature of the ain buffer to obtain high-quality gan epilayers lies in a narrow window of several tens of degrees. when the temperature is lower than a certain temperature range, the appearance of ain polycrystals results in the deterioration of the crystal quality of the ain buffer layer, which is greatly disadvantageous to the coalescence of the gan epilayer. although the ain buffer's crystal quality is improved as the growth temperature increases, the si outdiffusion from the substrate is also enhanced when the temperature is higher than a certain temperature range, which will demolish the subsequent growth of the gan epilayer. therefore, there exists an optimum growth temperature range of the ain buffer around 1080degreesc for the growth of high-quality gan epilayers. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8144]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB,Han XX. Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate[J]. journal of crystal growth,2004,263(1-4):4-11.
APA	Li DB,&Han XX.(2004).Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate.journal of crystal growth,263(1-4),4-11.
MLA	Li DB,et al."Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate".journal of crystal growth 263.1-4(2004):4-11.