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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 卷号: 97, 页码: 101-105 作者:  Wang, Juan;  Zhao, Dan;  Wang, Wei;  Zhang, Xiaofan;  Wang, Yanfeng 收藏  |  浏览/下载：53/0  |  提交时间：2019/11/19 Breakdown voltage  Diamond  Floating metal rings  Schottky barrier diodes   Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations 期刊论文 DIAMOND AND RELATED MATERIALS, 2019, 卷号: 92, 页码: 146-149 作者:  Yu, Xinxin;  Zhou, Jianjun;  Wang, Yanfeng;  Qiu, Feng;  Kong, Yuechan 收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19 Diamond  Boron implant  Schottky diode  Edge termination   Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 卷号: 34, 期号: 7 作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Liang, Guangda 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 Ga2O3  Schottky barrier diodes (SBDs)  tin oxide (SnOx)  oxygen partial  pressures   High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 3, 页码: 451-454 作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Mu, Wenxiang 收藏  |  浏览/下载：15/0  |  提交时间：2019/12/11 Ga2O3  Schottky barrier diodes (SBDs)  tin oxide (SnOx)   High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. 期刊论文 Superlattices & Microstructures, 2019, 卷号: Vol.125, 页码: 295-301 作者:  Bian, Zhao-Ke;  Zhou, Hong;  Xu, Sheng-Rui;  Zhang, Tao;  Dang, Kui 收藏  |  浏览/下载：25/0  |  提交时间：2019/12/17 SCHOTTKY-barrier  diodes  *GALLIUM  nitride  *GALLIUM  compounds  *DISLOCATIONS  in  crystals  *CRYSTAL  defects   Solution-Processed TiO2-Based Schottky Diodes With a Large Barrier Height 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 9, 页码: 1378-1381 作者:  Zhang, Xijian;  Cai, Wensi;  Zhang, Jiawei;  Brownless, Joseph;  Wilson, Joshua 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11 Schottky diode  TiO2  anodization  high frequency   Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242 作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao 收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17 HEMTs  Wide band gap semiconductors  Aluminum gallium nitride  Logic gates  Oscillators  Mathematical model  Schottky diodes  AlGaN/GaN  electron domain  high-electron mobility transistor (HEMT)  recessed barrier layer (RBL)  terahertz   Contacting MoS2 to MXene: Vanishing p-Type Schottky Barrier and Enhanced Hydrogen Evolution Catalysis 期刊论文 JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 卷号: 123, 页码: 3719-3726 作者:  You, Jinxuan;  Si, Chen;  Zhou, Jian;  Sun, Zhimei 收藏  |  浏览/下载：66/0  |  提交时间：2019/12/30 Calculations  Carbides  Chromium compounds  Hydrogen  Interface states  Layered semiconductors  Molybdenum compounds  Nanocatalysts  Nitrogen compounds  Schottky barrier diodes  Transition metals  Electronic device  Fermi level pinning  First-principles calculation  High work function  Hydrogen evolution  Hydrogen evolution reactions  Schottky barriers  Transition metal carbide  Vanadium compounds   The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 期号: 9, 页码: 1-5 作者:  Xu, YN (Xu, Yannan)[ 1,2 ];  Bi, JS (Bi, Jinshun)[ 1,2 ];  Li, YD (Li, Yudong)[ 3 ];  Xi, K (Xi, Kai)[ 1 ];  Fan, LJ (Fan, Linjie)[ 4 ] 收藏  |  浏览/下载：9/0  |  提交时间：2020/01/19