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	Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode
	Du, Lulu; Xin, Qian; Xu, Mingsheng; Liu, Yaxuan; Liang, Guangda; Mu, Wenxiang; Jia, Zhitai; Wang, Xinyu; Xin, Gongming; Tao, Xu-Tang 更多
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2019
卷号	34期号:7
关键词	Ga2O3 Schottky barrier diodes (SBDs) tin oxide (SnOx) oxygen partial pressures
DOI	10.1088/1361-6641/ab1721
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4529932
专题	山东大学
作者单位	Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China.
推荐引用方式 GB/T 7714	Du, Lulu,Xin, Qian,Xu, Mingsheng,et al. Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2019,34(7).
APA	Du, Lulu.,Xin, Qian.,Xu, Mingsheng.,Liu, Yaxuan.,Liang, Guangda.,...&Tao, Xu-Tang 更多.(2019).Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,34(7).
MLA	Du, Lulu,et al."Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34.7(2019).

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