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浏览/检索结果: 共19条，第1-10条 帮助 限定条件 发表日期：2015     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electrical performance of multilayer MoS2 transistors on high-kappa Al2O3 coated Si substrates 期刊论文 AIP ADVANCES, 2015, 卷号: 5, 期号: 5, 页码: 7 作者:  Li, T(李涛);  Wan, BS;  Du, G(杜刚);  Zhang, BS(张宝顺);  Zeng, ZM（曾中明） 收藏  |  浏览/下载：14/0  |  提交时间：2015/12/31 Design of GeSn-Based Heterojunction-Enhanced N-Channel Tunneling FET With Improved Subthreshold Swing and ON-State Current 期刊论文 2015, 卷号: 62, 页码: 1262-1268 作者:  Liu, Mingshan[1];  Liu, Yan[1];  Wang, Hongjuan[1];  Zhang, Qingfang[1];  Zhang, Chunfu[2] 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/28 Characteristics study of low temperature enhanced amorphous InGaZnO thin film transistors 期刊论文 Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2015, 卷号: 49, 期号: [db:dc_citation_issue], 页码: 1-5 and 18 作者:  Li, Yuanjie;  Jiang, Kai;  Liu, Zilong 收藏  |  浏览/下载：17/0  |  提交时间：2019/12/02 Active channel layers  Amorphous-indium gallium zinc oxides  Characteristics studies  Magnetron-sputtering deposition  ON/OFF current ratio  Output characteristics  Saturation mobility  Subthreshold swing   Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio 期刊论文 acs nano, 2015 Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lan-Mao 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 HIGH-PERFORMANCE ELECTRONICS  TO-UNIPOLAR CONVERSION  INTEGRATED-CIRCUITS  THRESHOLD VOLTAGE  CMOS DEVICES  ARRAYS  FABRICATION  DEPOSITION  TRANSPORT  MOBILITY   A Graphene-Based Vacuum Transistor with a High ON/OFF Current Ratio 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2015 Wu, Gongtao; Wei, Xianlong; Zhang, Zhiyong; Chen, Qing; Peng, Lianmao 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 FIELD-EFFECT TRANSISTORS  HOT-ELECTRON TRANSISTOR  BAND-GAP  HETEROSTRUCTURES  TRANSPORT   Fully transparent flexible dual-layer channel Ga-doped ZnO thin-film transistors on plastic substrates 期刊论文 ELECTRONICS LETTERS, 2015 Han, Dedong; Huang, Fuqing; Cong, Yingying; Huang, Lingling; Zhang, Yi; Shi, Pan; Yu, Wen; Zhou, Xiaoliang; Liu, Lifeng; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 zinc compounds  gallium  thin film transistors  semiconductor device manufacture  semiconductor thin films  flexible displays  fully transparent flexible dual-layer channel  thin-film transistors  plastic substrates  thin films  radio-frequency sputtering  electrical properties  mechanical flexibility  optical transparency  flexible displays  temperature 293 K to 298 K  voltage 3  2 V  ZnO:Ga   Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Cong, Yingying; Han, Dedong; Wu, Jing; Zhao, Nannan; Chen, Zhuofa; Zhao, Feilong; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 AMORPHOUS OXIDE SEMICONDUCTORS  POLY-SI TFTS   Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Chen, Zhuofa; Han, Dedong; Zhao, Nannan; Wu, Jing; Cong, Yingying; Dong, Junchen; Zhao, Feilong; Zhang, Shengdong; Zhang, Xing; Wang, Yi; Liu, Lifeng 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 GLASS SUBSTRATE  TEMPERATURE   Comparative study of silicon nanowire transistors with triangular-shaped cross sections 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Zhang, Yi-Bo; Sun, Lei; Xu, Hao; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 SCHOTTKY-BARRIER SOURCE/DRAIN  MOSFET  PERFORMANCE  SIMULATION  FINFETS  LEAKAGE   Flexible nickel-doped zinc oxide thin-film transistors fabricated on plastic substrates at low temperature 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Huang, Lingling; Han, Dedong; Chen, Zhuofa; Cong, Yingying; Wu, Jing; Zhao, Nannan; Dong, Junchen; Zhao, Feilong; Liu, Lifeng; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 ROOM-TEMPERATURE  SEMICONDUCTORS