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	Characteristics study of low temperature enhanced amorphous InGaZnO thin film transistors
	Li, Yuanjie; Jiang, Kai; Liu, Zilong
刊名	Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University
	2015
卷号	49期号:[db:dc_citation_issue]页码:1-5 and 18
关键词	Active channel layers Amorphous-indium gallium zinc oxides Characteristics studies Magnetron-sputtering deposition ON/OFF current ratio Output characteristics Saturation mobility Subthreshold swing
ISSN号	0253-987X
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3254678
专题	西安交通大学
推荐引用方式 GB/T 7714	Li, Yuanjie,Jiang, Kai,Liu, Zilong. Characteristics study of low temperature enhanced amorphous InGaZnO thin film transistors[J]. Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University,2015,49([db:dc_citation_issue]):1-5 and 18.
APA	Li, Yuanjie,Jiang, Kai,&Liu, Zilong.(2015).Characteristics study of low temperature enhanced amorphous InGaZnO thin film transistors.Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University,49([db:dc_citation_issue]),1-5 and 18.
MLA	Li, Yuanjie,et al."Characteristics study of low temperature enhanced amorphous InGaZnO thin film transistors".Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University 49.[db:dc_citation_issue](2015):1-5 and 18.

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