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科研机构
北京大学 [9]
内容类型
期刊论文 [7]
其他 [2]
发表日期
2015 [9]
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1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime
期刊论文
ieee electron device letters, 2015
He, Hongyu
;
Zheng, Xueren
;
Zhang, Shengdong
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
Thin-film transistor (TFT)
InGaZnO (IGZO)
low frequency noise
carrier mobility
THIN-FILM TRANSISTORS
LOW-FREQUENCY NOISE
Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process
期刊论文
ieee electron device letters, 2015
Xiao, Xiang
;
Shao, Yang
;
He, Xin
;
Deng, Wei
;
Zhang, Letao
;
Zhang, Shengdong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/11
Amorphous indium gallium zinc oxide (a-IGZO)
thin-film transistors (TFTs)
back channel anodization (BCA)
low temperature
Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
He, Hongyu
;
Zheng, Xueren
;
Zhang, Shengdong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Thin-film transistor (TFT)
InGaZnO (IGZO)
low frequency noise
series resistance noise
LOW-FREQUENCY NOISE
High-performance fully transparent Ti-Zn-O thin film transistors
其他
2015-01-01
Zhao, Nannan
;
Han, Dedong
;
Chen, Zhuofa
;
Wu, Jing
;
Cong, Yingying
;
Dong, Junchen
;
Zhao, Feilong
;
Zhang, Shengdong
;
Zhang, Xing
;
Wang, Yi
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Liu, Xiang
;
Wang, Lisa Ling
;
Hu, Hehe
;
Lu, Xinhong
;
Wang, Ke
;
Wang, Gang
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
a-IGZO TFTs
back-channel-etch (BCE)
plasma treatment
threshold voltage shift
THRESHOLD VOLTAGE
SHIFT
OXIDE
GATE
Comparative study of a-IGZO TFTs with direct current and radio frequency sputtered channel layers
期刊论文
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2015
Deng, Wei
;
Xiao, Xiang
;
He, Xin
;
Lee, Chia-Yu
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
amorphous indium-gallium-zinc oxide (a-IGZO)
RF sputtering
DC sputtering
oxygen vacancy
stability
THIN-FILM TRANSISTORS
TRANSPORT
Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Wang, Lisa Ling
;
He, Hongyu
;
Liu, Xiang
;
Deng, Wei
;
Zhang, Shengdong
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
Channel carrier density
oxide electric field
thin-film transistors (TFTs)
threshold voltage shift
THIN-FILM TRANSISTORS
BIAS-STRESS
CONDUCTION
INSTABILITIES
Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Shao, Yang
;
Xiao, Xiang
;
He, Xin
;
Deng, Wei
;
Zhang, Shengdong
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Amorphous indium-gallium-zinc oxide (a-IGZO)
anodized HfO2
high-k
low voltage
thin-film transistors (TFTs)
OXIDE
TEMPERATURE
ALUMINUM
Improved electrical stability of double-gate a-IGZO TFTs
其他
2015-01-01
He, Xin
;
Wang, Ling
;
Deng, Wei
;
Xiao, Xiang
;
Zhang, Letao
;
Leng, Chuanli
;
Chan, Mansun
;
Zhang, Shengdong
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
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