1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime | |
He, Hongyu ; Zheng, Xueren ; Zhang, Shengdong | |
刊名 | ieee electron device letters |
2015 | |
关键词 | Thin-film transistor (TFT) InGaZnO (IGZO) low frequency noise carrier mobility THIN-FILM TRANSISTORS LOW-FREQUENCY NOISE |
DOI | 10.1109/LED.2014.2378251 |
英文摘要 | Analytical 1/f noise expressions are presented for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter alpha in the mobility equation. The drain current noise power spectral density (PSD) is derived from Ghibaudo's carrier number fluctuation model. It is found that the parameter alpha clarifies the relationship between the drain current noise PSD and the drain current. The relationship is verified by the available experimental data.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000350334100024&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 2; ARTICLE; hongyuhe2018@yahoo.com; phxrzhen@scut.edu.cn; zhangsd@pku.edu.cn; 2; 156-158; 36 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/151926] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | He, Hongyu,Zheng, Xueren,Zhang, Shengdong. 1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime[J]. ieee electron device letters,2015. |
APA | He, Hongyu,Zheng, Xueren,&Zhang, Shengdong.(2015).1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime.ieee electron device letters. |
MLA | He, Hongyu,et al."1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime".ieee electron device letters (2015). |
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