Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film   Transistors Considering Series Resistance Noise

doi:10.1109/LED.2015.2469723

CORC > 北京大学 > 信息科学技术学院

	Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise
	He, Hongyu ; Zheng, Xueren ; Zhang, Shengdong
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
关键词	Thin-film transistor (TFT) InGaZnO (IGZO) low frequency noise series resistance noise LOW-FREQUENCY NOISE
DOI	10.1109/LED.2015.2469723
英文摘要	The 1/f noise expression is presented for the amorphous InGaZnO thin-film transistors (TFTs) at low drain voltage. Considering the mobility power-law parameter a in the TFTs, Ghibaudo's carrier number fluctuation model with the series resistance noise is applied to obtain the analytical normalized drain current noise power spectral density expression. The expression is compared with the numerical calculation, and verified by the available experimental data.; Thin-Film Transistors and Advanced Display Laboratory, Shenzhen; Shenzhen Municipal Scientific Program [JCYJ20140417144423195]; China Post-Doctoral Science Foundation [2015M570012]; National Science Foundation of China [61504003, 61574048]; SCI(E); EI; ARTICLE; hongyuhe2018@yahoo.com; phxrzhen@scut.edu.cn; zhangsd@pku.edu.cn; 10; 1056-1059; 36
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/415930]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Hongyu,Zheng, Xueren,Zhang, Shengdong. Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	He, Hongyu,Zheng, Xueren,&Zhang, Shengdong.(2015).Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise.IEEE ELECTRON DEVICE LETTERS.
MLA	He, Hongyu,et al."Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise".IEEE ELECTRON DEVICE LETTERS (2015).