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Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 42, 页码: 425103
Lang, XL; Xia, JB
收藏  |  浏览/下载：70/0  |  提交时间：2012/01/06
Calculation method of image morphing and its applications 期刊论文
jisuanji fuzhu sheji yu tuxingxue xuebao/journal of computer-aided design and computer graphics, 2011, 卷号: 23, 期号: 8, 页码: 1304-1310
Wang, Shoujue; Liang, Xianyang
收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation 期刊论文
ieee photonics journal, 2010, 卷号: 2, 期号: 6, 页码: 974-980
Zhao JH (Zhao Ji-Hong); Cheng BW (Cheng Bu-Wen); Chen QD (Chen Qi-Dai); Su W (Su Wen); Jiang Y (Jiang Ying); Chen ZG (Chen Zhan-Guo); Jia G (Jia Gang); Sun HB (Sun Hong-Bo)
收藏  |  浏览/下载：85/0  |  提交时间：2010/12/12
Fine structural splitting and exciton spin relaxation in single inas quantum dots 期刊论文
Journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: 4
作者:  Dou, X. M.;  Sun, B. Q.;  Xiong, Y. H.;  Niu, Z. C.;  Ni, H. Q.
收藏  |  浏览/下载：51/0  |  提交时间：2019/05/12
Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103516
Dou XM; Sun BQ; Xiong YH; Niu ZC; Ni HQ; Xu ZY
收藏  |  浏览/下载：99/0  |  提交时间：2010/03/08
1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation 期刊论文
semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 859-862
作者:  Pan JQ
收藏  |  浏览/下载：82/0  |  提交时间：2010/03/29
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679
作者:  Zhao DG
收藏  |  浏览/下载：1038/2  |  提交时间：2010/08/12
Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs 期刊论文
physica status solidi b-basic research, 1996, 卷号: 198, 期号: 1, 页码: 329-335
Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/11/17
High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells 期刊论文
physical review b, 1996, 卷号: 54, 期号: 19, 页码: 13820-13826
Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM
收藏  |  浏览/下载：56/0  |  提交时间：2010/11/17

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