Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices

	Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
	Lang, XL ; Xia, JB
刊名	journal of physics d-applied physics
	2011
卷号	44 期号:42 页码:425103
关键词	GASB SUPER-LATTICE SEMICONDUCTOR HETEROSTRUCTURES DEFORMATION POTENTIALS II SUPERLATTICES BAND PARAMETERS DETECTORS APPROXIMATION TRANSITIONS
ISSN号	0022-3727
通讯作者	lang, xl (reprint author), cas, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china，langxiaoli@semi.ac.cn ; xiajb@semi.ac.cn
学科主题	半导体物理
收录类别	SCI
资助信息	special funds for the national basic research program[2011cb922200]; national natural science foundation[60521001]
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22689]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Lang, XL,Xia, JB. Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices[J]. journal of physics d-applied physics,2011,44(42):425103.
APA	Lang, XL,&Xia, JB.(2011).Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices.journal of physics d-applied physics,44(42),425103.
MLA	Lang, XL,et al."Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices".journal of physics d-applied physics 44.42(2011):425103.