1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation

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	1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
	Pan JQ
刊名	semiconductor science and technology
	2007
卷号	22 期号:8 页码:859-862
关键词	THERMAL DEFORMATION
ISSN号	issn: 0268-1242
通讯作者	feng, w, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wfeng@semi.ac.cn
中文摘要	an ingaa1as multiquantum well (mqw) has been successfully overgrown on the absorptive ingaasp corrugation for fabricating the 1.3 mu m gain coupled distributed feedback (dfb) lasers. the absorptive ingaasp corrugation was efficaciously preserved during the overgrowth of the ingaa1as mqw active region. the absorptive ingaasp corrugation has a relatively high intensity around the pl peak wavelength in comparison with that of the ingaa1as mqw. the fabricated dfb laser exhibited a side mode suppression ratio of 40 db together with a high single-mode yield of 90%.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9362]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ. 1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation[J]. semiconductor science and technology,2007,22(8):859-862.
APA	Pan JQ.(2007).1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation.semiconductor science and technology,22(8),859-862.
MLA	Pan JQ."1.3 mu m gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation".semiconductor science and technology 22.8(2007):859-862.