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科研机构
北京大学 [11]
内容类型
期刊论文 [7]
其他 [4]
发表日期
2016 [3]
2015 [3]
2014 [1]
2013 [3]
2011 [1]
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Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-RRAM
其他
2016-01-01
Kang, J. F.
;
Huang, P.
;
Chen, Z.
;
Zhao, Y. D.
;
Liu, C.
;
Han, R. Z.
;
Liu, L. F.
;
Liu, X. Y.
;
Wang, Y. Y.
;
Gao, B.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
Resistive random access memory (RRAM)
switching mechanism
physical-based model
resistive switching
reliability
optimization design
MODEL
MEMORY
OPERATIONS
MECHANISM
Self-Selection RRAM Cell With Sub-mu A Switching Current and Robust Reliability Fabricated by High-K/Metal Gate CMOS Compatible Technology
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Huang, Peng
;
Chen, Sijie
;
Zhao, Yudi
;
Chen, Bing
;
Gao, Bin
;
Liu, Lifeng
;
Chen, Yong
;
Zhang, Ziying
;
Bu, Weihai
;
Wu, Hanming
;
Liu, Xiaoyan
;
Kang, Jinfeng
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2017/12/03
High-K/metal gate (HKMG)
nonliner
resistive random access memory (RRAM)
resistive switching
retention
ultralow switching current
OXIDE-BASED RRAM
DEVICE CHARACTERISTICS
CROSSBAR ARRAY
RESISTANCE
MODEL
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016
Kang, Jinfeng
;
Huang, Peng
;
Gao, Bin
;
Li, Haitong
;
Chen, Zhe
;
Zhao, Yudi
;
Liu, Chen
;
Liu, Lifeng
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/04
Resistive switching memory (RRAM)
physical model
optimization design
unified memory/computing architecture
MEMORY
MODEL
RRAM
A learnable parallel processing architecture towards unity of memory and computing
期刊论文
SCIENTIFIC REPORTS, 2015
Li, H.
;
Gao, B.
;
Chen, Z.
;
Zhao, Y.
;
Huang, P.
;
Ye, H.
;
Liu, L.
;
Liu, X.
;
Kang, J.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
RANDOM-ACCESS MEMORY
RESISTIVE SWITCHING MEMORIES
CONDUCTIVE FILAMENT
DEVICES
OPERATIONS
MODEL
RRAM
Modeling and Design Optimization of ReRAM
其他
2015-01-01
Kang, J. F.
;
Li, H. T.
;
Huang, P.
;
Chen, Z.
;
Gao, B.
;
Liu, X. Y.
;
Jiang, Z. Z.
;
Wong, H.S. P.
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
emerging memory
resistive switching memory
SPICE model
RRAM
Variation-Aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model
其他
2015-01-01
Li, H.
;
Jiang, Z.
;
Huang, P.
;
Wu, Y.
;
Chen, H.Y.
;
Gao, B.
;
Liu, X. Y.
;
Kang, J. F.
;
Wong, H.S. P.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
emerging memory
resistive switching memory
SPICE model
design tool
variability
reliability
DEVICE
SYSTEMS
Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching
期刊论文
ieee 纳米技术汇刊, 2014
Huang, Peng
;
Wang, Yijiao
;
Li, Haitong
;
Gao, Bin
;
Chen, Bing
;
Zhang, Feifei
;
Zeng, Lang
;
Du, Gang
;
Kang, Jinfeng
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2015/11/10
AC switching
compact model
high speed
low voltage
resistive random access memory (RRAM)
voltage-time dilemma
RESET MECHANISM
BIPOLAR RRAM
MEMORY
MODEL
DEVICES
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
期刊论文
ieee电子器件汇刊, 2013
Huang, Peng
;
Liu, Xiao Yan
;
Chen, Bing
;
Li, Hai Tong
;
Wang, Yi Jiao
;
Deng, Ye Xin
;
Wei, Kang Liang
;
Zeng, Lang
;
Gao, Bin
;
Du, Gang
;
Zhang, Xing
;
Kang, Jin Feng
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/10
Circuit simulation
compact model
conduction of resistive-switching random access memory (RRAM)
conductive filament&apos
parasitic effect
pulse mode
resistive switching
RESISTIVE-SWITCHING MEMORIES
DEVICE
s evolution
HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
期刊论文
acs nano, 2013
Yu, Shimeng
;
Chen, Hong-Yu
;
Gao, Bin
;
Kang, Jinfeng
;
Wong, H.S. Philip
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
resistive switching
RRAM
cross-point array
HfO2
bit-cost-effective
3D integration
METAL-OXIDE RRAM
NONVOLATILE MEMORY
PARAMETER VARIATION
DATA-STORAGE
DEVICE
NANOFILAMENTS
MECHANISM
MODEL
Resistive Switching Model for Electrolyte-oxide-semiconductor (EOS) Structure
其他
2013-01-01
Ma, X. Y.
;
Sun, G. C.
;
Chen, Y. F.
;
Wu, W. G.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
electrolyte-oxide-semiconductor (EOS) structure
resistive switching model
one-way conductivity
NANOIONICS
TRANSPORT
MEMORIES
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