A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC   Operations

doi:10.1109/TED.2013.2287755

CORC > 北京大学 > 信息科学技术学院

	A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
	Huang, Peng ; Liu, Xiao Yan ; Chen, Bing ; Li, Hai Tong ; Wang, Yi Jiao ; Deng, Ye Xin ; Wei, Kang Liang ; Zeng, Lang ; Gao, Bin ; Du, Gang ; Zhang, Xing ; Kang, Jin Feng
刊名	ieee电子器件汇刊
	2013
关键词	Circuit simulation compact model conduction of resistive-switching random access memory (RRAM) conductive filament&apos parasitic effect pulse mode resistive switching RESISTIVE-SWITCHING MEMORIES DEVICE s evolution
DOI	10.1109/TED.2013.2287755
英文摘要	A physics-based compact model of metal-oxide-based resistive-switching random access memory (RRAM) cell under dc and ac operation modes is presented. In this model, the conductive filament evolution corresponding to the resistive switching process is modeled by considering the transport behaviors of oxygen vacancies and oxygen ions together with the temperature effect. Both the metallic-like and electron hopping conduction transports are considered to model the conduction of RRAM. The model can reproduce both the typical $I{-}V$ characteristics of RRAM in high-/low-resistance state (LRS) and the nonlinear characteristics in LRS. Moreover, to accurately model ac operation mode, the effects of parasitic capacitance and resistance are included in our model. The developed compact model is verified and calibrated by measured data in different ${\rm HfO}x-based RRAM devices under dc and ac operation modes. The excellent agreement between the model predictions and experimental results shows a promising prospect of the future implementation of this compact model in large-scale circuit simulation to optimize the design of RRAM. ? 2013 IEEE.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000327584400018&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 48; ARTICLE; 12; 4090-4097; 60
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152226]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Peng,Liu, Xiao Yan,Chen, Bing,et al. A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations[J]. ieee电子器件汇刊,2013.
APA	Huang, Peng.,Liu, Xiao Yan.,Chen, Bing.,Li, Hai Tong.,Wang, Yi Jiao.,...&Kang, Jin Feng.(2013).A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations.ieee电子器件汇刊.
MLA	Huang, Peng,et al."A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations".ieee电子器件汇刊 (2013).