×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [28]
兰州大学 [6]
兰州理工大学 [2]
清华大学 [1]
厦门大学 [1]
大连理工大学 [1]
更多...
内容类型
期刊论文 [38]
其他 [3]
会议论文 [2]
学位论文 [1]
发表日期
2021 [1]
2019 [1]
2018 [1]
2017 [3]
2016 [8]
2015 [5]
更多...
学科主题
engineerin... [3]
engineerin... [1]
science & ... [1]
telecommun... [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共44条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:
Shih, Yu-Chuan
;
Lee, Ling
;
Liang, Kai-De
;
Manikandan, Arumugam
;
Liu, Wen-Wu
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2021/03/12
Copper
Copper oxides
Nanocrystalline materials
Nanowires
Oxide minerals
RRAM
Single crystals
Fabrication process
High current densities
Random access memory
Resistive switching
Resistive switching memory
Switching behaviors
Switching mechanism
Switching properties
Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Hang, Cheng-Zhou
;
Wang, Chen
;
Gao, Bin
;
Chen, Huan
;
Xu, Ming-Hong
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/02
Electric breakdown
Energy utilization
Hafnium compounds
Integrated circuit design
Intelligent systems
Monte Carlo methods
RRAM, Kinetic monte carlo simulation
Microscopic distribution
Neuromorphic computing
Resistive random access memory
Resistive random access memory (rram)
Resistive switching
Sub-nanosecond pulse
Thermal conductance, Switching
Low leakage current resistive memory based on Bi-1.10 (Fe0.95Mn0.05) O-3 films
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: Vol.33 No.9
作者:
Li, Zhen
;
Yang, Zhengchun
;
Wu, Jiagang
;
Zhou, Baozeng
;
Bao, Qiwen
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/02/25
resistive random access memory (RRAM)
thin films
BiFeO3
Mn-doped
sputtering
lower leakage current
Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering
期刊论文
NANOTECHNOLOGY, 2017
Wang, Zongwei
;
Kang, Jian
;
Yu, Zhizhen
;
Fang, Yichen
;
Ling, Yaotian
;
Cai, Yimao
;
Huang, Ru
;
Wang, Yangyuan
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
interface engineering
nonvolatile memory
resistive random access memory (RRAM)
resistive switching
nonlinearity
tantalum oxide
BIPOLAR RRAM
THIN-FILM
MEMORY
MECHANISM
ARCHITECTURE
CHALLENGES
ARRAY
MEMRISTOR
BILAYER
Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26
作者:
Lai, Yun-Feng
;
Chen, Fan
;
Zeng, Ze-Cun
;
Lin, PeiJie
;
Cheng, Shu-Ying
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/21
data retention
thermal stability
double layer
resistive random access memory (RRAM)
Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory
期刊论文
Journal of Materials Chemistry C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327
作者:
Su, Teng-Yu
;
Huang, Chi-Hsin
;
Shih, Yu-Chuan
;
Wang, Tsang-Hsuan
;
Medina, Henry
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2020/11/14
Defects
Diodes
Rhenium compounds
RRAM
Schottky barrier diodes
Sputtering
Switching
Thin films
Titanium compounds
Conduction Mechanism
Defect distribution
Gradient distributions
Rectifying characteristics
Rectifying properties
Resistive Random Access Memory (ReRAM)
Resistive switching behaviors
Resistive switching memory
原子层沉积HfO2薄膜及其1D1R器件阻变特性研究
学位论文
2016, 2016
陆超
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/06/20
阻变存储器
原子层沉积
HfO2
Resistive switching random access memory (RRAM)
Atomic layer deposition (ALD)
HfO2
Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory
期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 9, 页码: 3508-3513
作者:
Zhang, Bosen
;
Hu, Cong
;
Ren, Tianshuang
;
Wang, Bo
;
Qi, Jing
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2017/01/13
MgO
resistive random access memory (RRAM)
resistive switching (RS)
write-once-read-many-times memory (WORM)
ZnO
The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory
会议论文
作者:
Wang, Yan
;
Li, Yang
;
Liu, Qi
;
Bi, Jinshun
;
Liu, Jing
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/03/27
resistive random access memory (RRAM)
heavy ion
radiation
electrical performance
A flexible organic resistance memory device for wearable biomedical applications
期刊论文
NANOTECHNOLOGY, 2016
Cai, Yimao
;
Tan, Jing
;
Liu YeFan
;
Lin, Min
;
Huang, Ru
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/12/03
wearable biomedical devices
flexible
organic
resistive random access memory
nanotechnology
RANDOM-ACCESS MEMORY
NONVOLATILE MEMORY
RRAM
ARRAY
©版权所有 ©2017 CSpace - Powered by
CSpace