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	Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers
	Lai, Yun-Feng; Chen, Fan; Zeng, Ze-Cun; Lin, PeiJie; Cheng, Shu-Ying; Yu, Jin-Ling
刊名	CHINESE PHYSICS B
	2017
卷号	26
关键词	data retention thermal stability double layer resistive random access memory (RRAM)
ISSN号	1674-1056
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2891589
专题	福州大学
推荐引用方式 GB/T 7714	Lai, Yun-Feng,Chen, Fan,Zeng, Ze-Cun,et al. Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers[J]. CHINESE PHYSICS B,2017,26.
APA	Lai, Yun-Feng,Chen, Fan,Zeng, Ze-Cun,Lin, PeiJie,Cheng, Shu-Ying,&Yu, Jin-Ling.(2017).Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers.CHINESE PHYSICS B,26.
MLA	Lai, Yun-Feng,et al."Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers".CHINESE PHYSICS B 26(2017).

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