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Novel estimation solution on lithium-ion battery state of charge with current-free detection algorithm
期刊论文
IET CIRCUITS DEVICES & SYSTEMS, 2019, 卷号: 13, 页码: 245-250
作者:
Wang, Hongyi
;
Fan, Youyou
;
Chen, Chen
;
Tao, Tao
;
Qiao, Zeyu
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/11/19
clean energy
battery powered vehicles
current detection
battery management systems
electric vehicle charging
battery currents
current-free detection algorithm
estimation theory
lithium-ion battery state of charge
secondary cells
battery voltages
field programmable gate arrays
smart devices
SOC estimation algorithm
battery working process
lithium compounds
commercial common field-programmable gate array
electric vehicles
greenhouse gas emission reduction
sustainable energy
A Health Monitoring Method for Bond Wires in IGBT Modules Based on Voltage Ringing Characteristics.
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.9, 页码: 3953-3960
作者:
Lei, Jing
;
Mingxing, Du
;
Kexin, Wei
;
Hurley, William Gerard
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/11/21
Bond wire failure
Current measurement
health monitoring
Insulated gate bipolar transistors
measurement circuit
Monitoring
overshoot
Temperature measurement
Temperature sensors
Voltage measurement
voltage ringing characteristics
Wires
Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: Vol.40 No.2, 页码: 275-278
作者:
Ma, Jun
;
Kampitsis, Georgios
;
Xiang, Peng
;
Cheng, Kai
;
Matioli, Elison
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/13
GaN
SBD
multi-channel
tri-gate
tri-anode
breakdown
leakage current
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:
Xiaorong Luo
;
Yang Yang
;
Tao Sun
;
Jie Wei
;
Diao Fan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
Anodes
Resistance
Current density
Silicon-on-insulator
Insulated gate bipolar transistors
Spontaneous emission
Sun
Low-loss
p-type polysilicon
self-adaptive resistance (SAR)
shorted-anode (SA)
snapback-free
silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
Study on the destruction mechanism caused by dynamic avalanche in GCTs
期刊论文
2019, 卷号: 92, 页码: 34-41
作者:
Yang, Wuhua
;
Wang, Cailin
;
Yang, Jing
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/20
Power semiconductor device
Gate commutated thyristor
Dynamic avalanche
Current filament
Destruction mechanism
Limitation of switching-self-clamping-mode "SSCM" in high voltage IGBTs
期刊论文
2019, 卷号: 96, 页码: 1-6
作者:
Wang, Cailin
;
Yang, Wuhua
;
Yang, Jing
;
Zhang, Lei
;
Zhang, Ruliang
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/20
Insulated gate bipolar transistor (IGBT)
Switching-self-clamping-mode (SSCM)
Dynamic avalanche
Current filament
Safe operating area (SOA)
EMI mitigation in switching power converters combining closed-loop gate drive and chaotic frequency modulation technique
期刊论文
IET POWER ELECTRONICS, 2019, 卷号: 12, 页码: 3033-3040
作者:
Cui, Tongkai
;
Ma, Qishuang
;
Xu, Ping
;
Zhang, Poming
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/30
electromagnetic interference
switching convertors
insulated gate bipolar transistors
power MOSFET
switching transients
switching power converters
chaotic frequency modulation technique
chaotic switching frequency modulation technique
Gaussian S-shape switching transients
EMI mitigation
closed-loop gate drive
voltage transients
current transients
power metal oxide semiconductor field effect transistor
insulated-gate bipolar transistor
conducted emissions
radiated emission
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:
Yang YM(杨育梅)
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2020/11/13
Ballistics
Dielectric materials
Drain current
Gate dielectrics
MOSFET devices
Poisson equation
Shims
Direct current performance
High- k
junctionless
Junctionless transistors
Non-equilibrium green functions
Nonequilibrium green function formalisms
Quantum simulators
Subthreshold characteristics
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates
会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:
Lou, Haijun
;
Li, Wentao
;
Yang, Yumei
;
Lin, Xinnan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/11/15
Drain current
Threshold voltage
junctionless
Junctionless transistors
Recessed gate
sidewall
Sidewall angles
Subthreshold
Efficient skyrmion transport mediated by a voltage controlled magnetic anisotropy gradient
期刊论文
NANOSCALE, 2018, 卷号: 10, 期号: 2, 页码: 733-740
作者:
Wang, Xuan
;
Gan, W. L.
;
Martinez, J. C.
;
Tan, F. N.
;
Jalil, M. B. A.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/15
Propulsion
Refractory metal compounds
Gate electrodes
Over current
Packing density
Potential wells
Skyrmion dynamics
Skyrmions
Spin torque
Voltage-controlled
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