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	Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
	Ma, Jun; Kampitsis, Georgios; Xiang, Peng; Cheng, Kai; Matioli, Elison
刊名	IEEE ELECTRON DEVICE LETTERS
	2019
卷号	Vol.40 No.2页码:275-278
关键词	GaN SBD multi-channel tri-gate tri-anode breakdown leakage current
ISSN号	0741-3106
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4612107
专题	湖南大学
作者单位	1.Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland 2.Enkris Semicond Inc, Suzhou 215123, Peoples R China
推荐引用方式 GB/T 7714	Ma, Jun,Kampitsis, Georgios,Xiang, Peng,et al. Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance[J]. IEEE ELECTRON DEVICE LETTERS,2019,Vol.40 No.2:275-278.
APA	Ma, Jun,Kampitsis, Georgios,Xiang, Peng,Cheng, Kai,&Matioli, Elison.(2019).Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance.IEEE ELECTRON DEVICE LETTERS,Vol.40 No.2,275-278.
MLA	Ma, Jun,et al."Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance".IEEE ELECTRON DEVICE LETTERS Vol.40 No.2(2019):275-278.

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