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近代物理研究所 [17]
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Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Investigation of single event effect in 28-nm system-on-chip with multi patterns*
期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 10, 页码: 5
作者:
Yang, Wei-Tao
;
Li, Yong-Hong
;
Guo, Ya-Xin
;
Zhao, Hao-Yu
;
Li, Yang
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  |  
浏览/下载:30/0
  |  
提交时间:2021/12/15
system-on-chip
heavy ion
single event effect
Silicon equivalent gas in silicon equivalent proportional counter - Monte Carlo simulations
期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2020, 卷号: 167, 页码: 4
作者:
Chiang, Yueh
;
Chao, Tsi-Chian
;
Cho, I-Chun
;
Lee, Chung-Chi
;
Hong, Ji-Hong
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/01/19
Silicon equivalent gas
Silicon equivalent proportional counter
Monte Carlo simulation
Linear energy transfer
Single event effect
SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA
期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12
作者:
Cai, Chang
;
Gao, Shuai
;
Zhao, Peixiong
;
Yu, Jian
;
Zhao, Kai
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  |  
浏览/下载:39/0
  |  
提交时间:2022/01/19
field-programmable gate arrays
embedded block memory
single event
fault tolerance
radiation effect
Preliminary single event effect distribution investigation on 28 nm soc using heavy ion microbeam
期刊论文
Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2019, 卷号: 450, 页码: 323-326
作者:
Yang, Weitao
;
Du, Xuecheng
;
Guo, Jinlong
;
Wei, Junze
;
Du, Guanghua
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  |  
浏览/下载:119/0
  |  
提交时间:2019/10/08
Single event effect (see)
System on chip (soc)
Heavy ion microbeam
On-chip-memory (ocm)
Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 450, 页码: 323-326
作者:
Yang, Weitao
;
Du, Xuecheng
;
Guo, Jinlong
;
Wei, Junze
;
Du, Guanghua
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2019/11/10
Single event effect (SEE)
System on Chip (SoC)
Heavy ion microbeam
On-chip-memory (OCM)
Effects of total ionizing dose on single event effect sensitivity of FRAMs
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7
作者:
Ji, Qinggang
;
Liu, Jie
;
Li, Dongqing
;
Liu, Tianqi
;
Ye, Bing
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  |  
浏览/下载:55/0
  |  
提交时间:2019/11/10
Ferroelectric random access memory
Total ionizing dose
Single event effect
TCAD simulation
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
收藏
  |  
浏览/下载:91/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Investigation of flux dependent sensitivity on single event effect in memory devices
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 7, 页码: 076101
作者:
Liu, Tian-qi
;
Xi, Kai
;
Hou, Ming-dong
;
Sun, You-mei
;
Duan, Jing-lai
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  |  
浏览/下载:32/0
  |  
提交时间:2018/10/08
ion flux
single event effect
GEANT4 simulation
memory device
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