SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

doi:10.3390/electronics8121531

	SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA
	Cai, Chang 2,3; Gao, Shuai 2,3; Zhao, Peixiong 2,3; Yu, Jian 4; Zhao, Kai 4; Xu, Liewei 4; Li, Dongqing 2,3; He, Ze 2,3; Yang, Guangwen 1,5; Liu, Tianqi 1,5
刊名	ELECTRONICS
	2019-12-01
卷号	8 期号:12 页码:12
关键词	field-programmable gate arrays embedded block memory single event fault tolerance radiation effect
DOI	10.3390/electronics8121531
通讯作者	Liu, Tianqi(liutianqi@mail.tsinghua.edu.cn) ; Liu, Jie(j.liu@impcas.ac.cn)
英文摘要	Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were 3.5 nJ, and the SEU cross-sections were correlated positively to the laser's energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.
资助项目	National Key Research and Development Program of China[2016YFB0901804] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[61672312] ; National Natural Science Foundation of China[11675233]
WOS关键词	RELIABILITY
WOS研究方向	Engineering
语种	英语
出版者	MDPI
WOS记录号	WOS:000506678200157
资助机构	National Key Research and Development Program of China ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141488]
专题	中国科学院近代物理研究所
通讯作者	Liu, Tianqi; Liu, Jie
作者单位	1.Natl Supercomp Ctr Wuxi, Wuxi 214000, Jiangsu, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 4.Fudan Univ, State Key Lab ASIC & Syst, Shanghai 201203, Peoples R China 5.Tsinghua Univ, Dept Comp Sci & Technol, Beijing 100084, Peoples R China
推荐引用方式 GB/T 7714	Cai, Chang,Gao, Shuai,Zhao, Peixiong,et al. SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA[J]. ELECTRONICS,2019,8(12):12.
APA	Cai, Chang.,Gao, Shuai.,Zhao, Peixiong.,Yu, Jian.,Zhao, Kai.,...&Liu, Jie.(2019).SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA.ELECTRONICS,8(12),12.
MLA	Cai, Chang,et al."SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA".ELECTRONICS 8.12(2019):12.