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浏览/检索结果: 共11条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Online junction temperature estimation method for SiC modules with built-in NTC sensor 期刊论文 CPSS Transactions on Power Electronics and Applications, 2019, 卷号: Vol.4 No.1, 页码: 94-99 作者:  Ping Liu 收藏  |  浏览/下载：102/0  |  提交时间：2019/12/13 Silicon carbide  Junctions  MOSFET  Temperature sensors  Impedance  Heating systems  Mathematical model  Boundary conditions  junction temperature  silicon carbide (SiC)  thermal model.   Carrier-Based Double Integral Sliding-Mode Controller of Class-D Amplifier 期刊论文 IEEE Access, 2019, 卷号: Vol.7, 页码: 1275-1283 作者:  Xiaohua Wu;  Haider Zaman;  Xiancheng Zheng;  Shahbaz Khan;  Husan Ali 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/13 Mathematical  model  Frequency  response  Q-factor  Control  systems  Switching  frequency  Silicon  carbide  Voltage  control  Carrier-based  double  integral  sliding-mode  (CBDISM)  class-D  amplifier  Q-factor  SiC  MOSFET   Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780 作者:  Jun Wang;  Xi Jiang;  Zongjian Li;  Z. John Shen 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/13 MOSFET  Silicon carbide  Logic gates  Insulated gate bipolar transistors  Switches  Leakage currents  Silicon  Failure analysis  gate control  hybrid switch (HyS)  IGBT  short-circuit (SC)  Silicon Carbide (SiC) $\scriptscriptstyle{\text{MOSFET}}$   Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754 作者:  Jun Wang;  Zongjian Li;  Xi Jiang;  Cheng Zeng;  Z. John Shen 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/13 Switches  Insulated  gate  bipolar  transistors  Silicon  carbide  MOSFET  Logic  gates  Silicon  Gate  control  hybrid  switch  IGBT  junction  temperature  mosfet  power  loss  SiC   Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780 作者:  Wang, J;  Jiang, X;  Li, ZJ;  Shen, ZJ 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/17 Failure analysis  gate control  hybrid switch (HyS)  IGBT  short-circuit (SC)  Silicon Carbide (SiC) MOSFET   A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules 期刊论文 2019, 卷号: 34, 页码: 7775-7787 作者:  Yang, Yuan;  Wen, Yang;  Gao, Yong 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/20 Active gate driver (AGD)  electromagnetic interference (EMI)  silicon carbide (SiC) MOSFET  overshoots   Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction 期刊论文 IEEE Transactions on Power Electronics, 2018, 页码: 1 作者:  Jun Wang;  Zongjian Li;  Xi Jiang;  Cheng Zeng;  John Shen GAE 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/26 Switches  Insulated  gate  bipolar  transistors  Silicon  carbide  MOSFET  Logic  gates  Silicon  Hybrid  switch  SiC  MOSFET  IGBT  gate  control  power  loss  junction  temperature   An Improved Active Gate Drive Method for SiC MOSFET Better Switching Performance 会议论文 Proceedings of 2018 IEEE 3rd Advanced Information Technology, Electronic and Automation Control Conference, IAEAC 2018 作者:  Xu, C.;  Ma, Q.;  Xu, P.;  Cui, T.;  Zhang, P. 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/30 Electromagnetic pulse  Silicon carbide  SPICE  Switching  Threshold voltage  Active gate drives  Circuit elements  Gate resistance  SiC MOSFET  Supply voltages  Switching loss  Switching performance  Theoretical derivations  MOSFET devices   An Active Voltage Controller of SiC MOSFET for Reduced EMI Generation 会议论文 Proceedings of 2018 IEEE 3rd Advanced Information Technology, Electronic and Automation Control Conference, IAEAC 2018 作者:  Yang, J.;  Shi, J.;  Cui, T. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Electromagnetic pulse  Silicon carbide  Switching  Voltage control  Active voltage controls  Gaussian waveforms  High frequency HF  Performance improvements  SiC MOSFET  Suppression effects  Switching dynamics  Switching transient  MOSFET devices   Voltage Suppression in Wire-Bond-Based Multichip Phase-Leg SiC MOSFET Module Using Adjacent Decoupling Concept 期刊论文 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2017, 卷号: 64, 页码: 8235-8246 作者:  Ren, Yu;  Yang, Xu;  Zhang, Fan;  Wang, Laili;  Wang, Kangping 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET)  module packaging  Commutation loop inductance  voltage overshoot  split decoupling capacitors