A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules | |
Yang, Yuan; Wen, Yang; Gao, Yong | |
2019 | |
卷号 | 34页码:7775-7787 |
关键词 | Active gate driver (AGD) electromagnetic interference (EMI) silicon carbide (SiC) MOSFET overshoots |
ISSN号 | 0885-8993 |
DOI | 10.1109/TPEL.2018.2878779 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000469912200055 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4969002 |
专题 | 西安理工大学 |
推荐引用方式 GB/T 7714 | Yang, Yuan,Wen, Yang,Gao, Yong. A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules[J],2019,34:7775-7787. |
APA | Yang, Yuan,Wen, Yang,&Gao, Yong.(2019).A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules.,34,7775-7787. |
MLA | Yang, Yuan,et al."A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules".34(2019):7775-7787. |
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