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科研机构
物理研究所 [7]
山东大学 [2]
力学研究所 [1]
兰州理工大学 [1]
西安交通大学 [1]
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期刊论文 [12]
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2021 [1]
2012 [2]
2011 [1]
2009 [2]
2008 [4]
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Anion Exchange-Induced Crystal Engineering via Hot-Pressing Sublimation Affording Highly Efficient and Stable Perovskite Solar Cells
期刊论文
SOLAR RRL, 2021, 卷号: 5, 期号: 3, 页码: -
作者:
Ding, Bin
;
Peng, Jun
;
Chu, Qian-Qian
;
Zhao, Shenyou
;
Shen, Heping
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2021/03/12
Cell engineering
Conversion efficiency
Crystal engineering
Crystal orientation
Efficiency
Grain boundaries
Growth rate
Hot pressing
Layered semiconductors
Lead compounds
Perovskite
Sublimation
Thin film solar cells
Thin films
Ambient conditions
Chemical equilibriums
High power conversion
Perovskite thin films
Photovoltaic performance
Steady-state efficiency
Thermal annealing process
Uniform temperature
Crystal growth of AlN: Effect of SiC substrate
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 卷号: 15, 期号: 4, 页码: 401
Zuo, SB
;
Chen, XL
;
Jiang, LB
;
Bao, HQ
;
Wang, J
;
Guo, LW
;
Wang, WJ
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/09/17
BULK ALUMINUM NITRIDE
SUBLIMATION GROWTH
SINGLE-CRYSTALS
NATIVE ALN
NUCLEATION
MORPHOLOGY
EPITAXY
Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer
期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 卷号: 47, 期号: 2, 页码: 139
Zuo, SB
;
Wang, J
;
Chen, XL
;
Jin, SF
;
Jiang, LB
;
Bao, HQ
;
Guo, LW
;
Sun, W
;
Wang, WJ
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/09/17
BULK ALUMINUM NITRIDE
SUBLIMATION GROWTH
OPTICAL-PROPERTIES
SEEDED GROWTH
NUCLEATION
EPITAXY
FILMS
GAN
Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method
期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2011, 卷号: 46, 期号: 5, 页码: 455
Wang, WJ
;
Zuo, SB
;
Bao, HQ
;
Wang, J
;
Jiang, LB
;
Chen, XL
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/09/17
PHYSICAL VAPOR TRANSPORT
SUBLIMATION GROWTH
ALUMINUM NITRIDE
Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method
期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2009, 卷号: 44, 期号: 4, 页码: 357
Peng, TH
;
Yang, H
;
Jian, JK
;
Wang, WJ
;
Wang, WY
;
Chen, XL
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/09/17
SEEDED SUBLIMATION GROWTH
PHYSICAL VAPOR TRANSPORT
SILICON-CARBIDE
TEMPERATURE-GRADIENT
SIC POLYTYPES
BOULES
6H
Debye temperature of 4H-SiC determined by X-ray powder diffraction
期刊论文
POWDER DIFFRACTION, 2009, 卷号: 24, 期号: 4, 页码: 311
Peng, TH
;
Lou, YF
;
Jin, SF
;
Wang, WY
;
Wang, WJ
;
Wang, G
;
Chen, XL
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/09/17
SIC BULK CRYSTAL
SILICON-CARBIDE
SUBLIMATION GROWTH
PVT METHOD
GRAPHITIZATION
REFINEMENT
Progress In Modeling Of Fluid Flows In Crystal Growth Processes
期刊论文
Progress In Natural Science, 2008, 页码: 1465-1473
作者:
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Yan JY(颜君毅)
;
Qin M(秦明)
收藏
  |  
浏览/下载:724/52
  |  
提交时间:2009/08/03
Modeling
Crystal Growth
Fluid Flow
Czochralski Growth
Ammonothermal Growth
Physical Vapor Transport
Transverse Magnetic-Field
Physical-Vapor Transport
Sic-Bulk Growth
Silicon Czochralski Furnace
Thermal-Capillary Analysis
Radiative Heat-Transfer
Sublimation Growth
Numerical-Simulation
Ammonothermal Growth
Oxygen Distribution
Faster growth of 6H-SiC single crystals by a physical vapor transport technique with two crucibles
期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2008, 卷号: 37, 期号: 5, 页码: 721-725
作者:
Cheng, Jikuan
;
Gao, Jiqiang
;
Liu, Junlin
;
Yang, Jianfeng
;
Jiang, Xian
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/18
silicon carbide
single crystal
growth rate
sublimation growth
Surface preparation of AlN substrates
期刊论文
Crystal Research and Technology: Journal of Experimental and Industrial Crystallography, 2008, 卷号: 43, 期号: 6, 页码: 651-655
作者:
Chen XF
;
Siche D
;
Albrecht M
;
Hartmann C
;
Wollweber J
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/26
substrates
surface structure
growth from vapour
nitrides
semiconducting aluminium compounds
SINGLE-CRYSTALS
BULK ALN
GROWTH
SUBLIMATION
ALUMINUM
LAYERS
Birefringence images of micropipes viewed end-on in 6H-SiC single crystals
期刊论文
Journal of Applied Crystallography, 2008, 期号: 5, 页码: 939-943
作者:
Ning L
;
Hu XB
;
Xu XG
;
Chen XF
;
Wang YM
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/26
SUBLIMATION METHOD
EPITAXIAL-GROWTH
SILICON-CARBIDE
DEFECTS
GAN
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