Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method
	Peng, TH ; Yang, H ; Jian, JK ; Wang, WJ ; Wang, WY ; Chen, XL
刊名	CRYSTAL RESEARCH AND TECHNOLOGY
	2009
卷号	44 期号:4 页码:357
关键词	SEEDED SUBLIMATION GROWTH PHYSICAL VAPOR TRANSPORT SILICON-CARBIDE TEMPERATURE-GRADIENT SIC POLYTYPES BOULES 6H
ISSN号	0232-1300
通讯作者	Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	Misoriented domains (MDs) are common defects in 6H-SiC single crystals. We performed an experimental study on the formation of MDs in 2-inch 6H-SiC single crystals, Micro-Raman spectroscopy revealed that the polytype of MDs was mainly 4H-SiC. By changing growth conditions, it was found that the MDs' formation was closely related to growth rate and the position of highest temperature relative to growth interface. When the growth rate of ingots was relatively high the MDs were more likely to form. Furthermore, the nearer growth interface the position of highest temperature was, the: larger the size of the MDs. Based on our experimental findings we suggested that the MDs' formation and the polytype switching from 6H- to 4H-SiC were due to too large axial and/or radial temperature gradients. The results would be helpful to improve the quality of SiC single crystals grown by PVT technique. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
收录类别	SCI
资助信息	National Natural Science Foundation of PR China [50502039, 50702073]; "973" Program [513270606, 2007CB936300]; National High Technology Research and Development Program of China [2006AA03A146, 2006AA03A 107]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37988]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Peng, TH,Yang, H,Jian, JK,et al. Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2009,44(4):357.
APA	Peng, TH,Yang, H,Jian, JK,Wang, WJ,Wang, WY,&Chen, XL.(2009).Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method.CRYSTAL RESEARCH AND TECHNOLOGY,44(4),357.
MLA	Peng, TH,et al."Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method".CRYSTAL RESEARCH AND TECHNOLOGY 44.4(2009):357.