Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer

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	Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer
	Zuo, SB ; Wang, J ; Chen, XL ; Jin, SF ; Jiang, LB ; Bao, HQ ; Guo, LW ; Sun, W ; Wang, WJ
刊名	CRYSTAL RESEARCH AND TECHNOLOGY
	2012
卷号	47 期号:2 页码:139
关键词	BULK ALUMINUM NITRIDE SUBLIMATION GROWTH OPTICAL-PROPERTIES SEEDED GROWTH NUCLEATION EPITAXY FILMS GAN
ISSN号	0232-1300
通讯作者	Wang, WJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	6H-SiC (0001) deposited 300 nm thick AlN film by MOCVD was used as the substrate to grow AlN crystals by the physical vapour transport (PVT) method. It was confirmed that c-axis oriented AlN films were grown and this material had a 3D growth mode. The root mean square (RMS) value for the film was measured to be 2.17 nm. Nucleation and further growth of AlN on so prepared substrate was investigated. Colorless and transparent AlN crystal with 1 mm thick and 40 mm in diameter was obtained after 4 h growth on this substrate. The transparent AlN showed strong (0001) texture XRD patterns, only the (0002) reflection was observed in symmetric -2 scans. The full width at half maximum for a (0002) X-ray rocking curve was less than 0.1 degrees indicating good crystalline quality. Anisotropic etchings in molten KOH shows that the growth (0001) plane exposed to the AlN source predominately has an aluminum polarity, no N-polar inversion domains were observed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
收录类别	SCI
资助信息	National Basic Research Program of China (973 Program) [2007CB936300]; National High Technology Research and Development Program of China (863 Program) [2006AA03A107]; National Natural Science Foundation of China [50702073, 51172270]; Chinese Academy of Sciences
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38940]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zuo, SB,Wang, J,Chen, XL,et al. Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2012,47(2):139.
APA	Zuo, SB.,Wang, J.,Chen, XL.,Jin, SF.,Jiang, LB.,...&Wang, WJ.(2012).Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer.CRYSTAL RESEARCH AND TECHNOLOGY,47(2),139.
MLA	Zuo, SB,et al."Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer".CRYSTAL RESEARCH AND TECHNOLOGY 47.2(2012):139.