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Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
Acta Materialia, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M.J.
;
Tang, Y.L.
;
Wang, Y.J.
;
Zhu, Y.L.
;
Ma, J.Y.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2020/11/14
Bismuth compounds
Digital storage
Heterojunctions
High resolution transmission electron microscopy
Iron compounds
Scanning probe microscopy
Switching
Transmission electron microscopy
Tunnel junctions
Charged domain wall
Conductive filaments
Macroscopic and microscopic
Nonvolatile memory devices
Piezoresponse force microscopy
Resistance switching behaviors
Resistive switching behaviors
Technological applications
Multibit Optoelectronic Memory in Top-Floating-Gated van der Waals Heterostructures
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 36
作者:
Huang, Wenhao
;
Yin, Lei
;
Wang, Feng
;
Cheng, Ruiqing
;
Wang, Zhenxing
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  |  
浏览/下载:92/0
  |  
提交时间:2019/12/05
multibit storage ability
nonvolatile optoelectronic memory
top floating gate
van der Waals heterostructures
Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 740, 页码: 816-822
作者:
Chen, Y. R.
;
Li, Z. M.
;
Zhang, Z. W.
;
Hu, L. Q.
;
Jiang, H.
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  |  
浏览/下载:5/0
  |  
提交时间:2019/11/21
Annealing effect
Resistive switching
Nonvolatile memory
Metal-insulator-semiconductor
Data storage materials
Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 36, 页码: 30614-30622
作者:
Desfeux, Rachel
;
Li, Xiaoguang
;
Migot, Sylvie
;
Chaudhuri, Debapriya
;
Yang, Hongxin
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  |  
浏览/下载:183/0
  |  
提交时间:2018/12/04
Nonvolatile Memory
Spinterface
Valves
Films
Semiconductors
Storage
Polymer
Devices
A Highly Non-Volatile Memory Scalable and Efficient File System
会议论文
2018 IEEE 36TH INTERNATIONAL CONFERENCE ON COMPUTER DESIGN (ICCD), 2018-01-01
作者:
Yang, Fan
;
Kang, Junbin
;
Ma, Shuai
;
Huai, Jinpeng
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Computer architecture
Nonvolatile storage
Scalability
Virtual storage
Consistency
Data consistency
File systems
Non-volatile memory
Novel techniques
Performance
State of the art
Strong consistency
File organization
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device
期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:
Chen, Y. R.
;
Li, Z. M.
;
Zhang, Z. W.
;
Hu, L. Q.
;
Jiang, H.
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/09/17
Data storage materials
Resistive switching
Metal-insulator-semiconductor
Annealing effect
Nonvolatile memory
nonvolatile memory
behaviors
mechanism
breakdown
layer
power
ti
Chemistry
Materials Science
Metallurgy & Metallurgical Engineering
Multilevel Nonvolatile Organic Photomemory Based on Vanadyl-Phthalocyanine/para-Sexiphenyl Heterojunctions
期刊论文
ACS Photonics, 2017, 卷号: 4, 期号: 10, 页码: 2573-2579
作者:
Qian, Chuan
;
Sun, Jia*
;
Kong, Ling-an
;
Fu, Ying
;
Chen, Yang
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/03
organic heterojunction
molecular template growth
nonvolatile organic photomemory
multilevel photocurrent storage
current sensitive atomic force microscopy
Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors
期刊论文
ACS NANO, 2016
Chen, Hongliang
;
Cheng, Nongyi
;
Ma, Wei
;
Li, Mingliang
;
Hu, Shuxin
;
Gu, Lin
;
Meng, Sheng
;
Guo, Xuefeng
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2017/12/03
organic field-effect transistor
flexible nonvolatile memory
diarylethene
self-assembled monolayer
photoactive hybrid dielectric
FIELD-EFFECT TRANSISTORS
THIN-FILM TRANSISTORS
FLOATING-GATE
ELECTRIC BISTABILITY
INTEGRATED-CIRCUITS
GOLD NANOPARTICLES
FLASH MEMORY
DEVICES
ELEMENTS
STORAGE
Multi-bit nonvolatile logic implemented with metal-oxide based resistive switching device
期刊论文
固体通讯, 2015
Gao, Bin
;
Chen, Bing
;
Zhang, Feifei
;
Huang, Peng
;
Liu, Lifeng
;
Liu, Xiaoyan
;
Kang, Jinfeng
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2015/11/10
Hafnium oxide
Gd-doping
Resistive switching
Multi-bit nonvolatile logic
STORAGE
MEMORY
Research of data retention for charge trapping memory by first-principles
期刊论文
Wuli Xuebao/Acta Physica Sinica, 2015, 卷号: Vol.64 No.21
作者:
Wang Jia-Yu
;
Jiang Xian-Wei
;
Dai Guang-Zhen
;
Chen Jun-Ning
;
Jin Bo
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/22
NONVOLATILE MEMORY
STORAGE LAYER
FLASH MEMORY
OXIDE
OXYGEN
HFO2
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